Mechanisms of CVD diamond nucleation and growth on mechanically scratched Si(100) surfaces

Arnault, J. C.; Demuynck, L.; Speisser, C.; Normand, F. Le

doi:10.1007/s100510050943

Cited by 52 publications

(44 citation statements)

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“…In situ surface analyses are known to be powerful tools to investigate the early stages of diamond nucleation on different heterosubstrates, such as silicon, 5 copper, 6 and iridium. 7 This ultrahigh-vacuum ͑UHV͒ chamber was equipped with a VSW 100-mm hemispherical analyzer.…”

Section: Methodsmentioning

confidence: 99%

“…a kinetic energy of the incident electrons of 3 keV and a modulation of 4 V. More details concerning the experimental conditions have been published elsewhere. 5 High-resolution SEM investigations were performed using either a JEOL 6700F microscope or a LEO Supra 35 both equipped with a field-emission gun providing a high brilliance and a lateral resolution lower than 10 nm for our samples. The images were recorded using an acceleration voltage of 3 or 5 kV.…”

Section: Methodsmentioning

confidence: 99%

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Effects of the bias enhanced nucleation hot-filament chemical-vapor deposition parameters on diamond nucleation on iridium

Arnault

Schull

Polini

et al. 2005

Journal of Applied Physics

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The effects of the bias current density and the filament-to-substrate distance on the nucleation of diamond on iridium buffer layers were investigated in a hot-filament chemical-vapor deposition ͑HFCVD͒ reactor. The nucleation density increased by several orders of magnitude with the raise of the bias current density. According to high-resolution field-emission gun scanning electron microscopy observation, diamond nuclei formed during bias-enhanced nucleation ͑BEN͒ did not show any preferred oriented growth. Moreover, the first-nearest-neighbor distance distribution was consistent with a random nucleation mechanism. This occurrence suggested that the diffusion of carbon species at the substrate surface was not the predominant mechanism taking place during BEN in the HFCVD process. This fact was attributed to the formation of a graphitic layer prior to diamond nucleation. We also observed that the reduction of the filament sample distance during BEN was helpful for diamond growth. This nucleation behavior was different from the one previously reported in the case of BEN-microwave chemical-vapor deposition experiments on iridium and has been tentatively explained by taking into account the specific properties and limitations of the HFCVD technique.

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Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Effects of the bias enhanced nucleation hot-filament chemical-vapor deposition parameters on diamond nucleation on iridium

Arnault

Schull

Polini

et al. 2005

Journal of Applied Physics

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“…A mixed gas composed of methane and hydrogen has been used as feed gas in the conventional CVD method [1][2][3][4]. It is now well known that the growth rate of diamond films and nanodiamond carbon components in the diamond films were increased by argon additions.…”

Section: Introductionmentioning

confidence: 99%

The Influence of Argon on the Deposition and Structure of Polycrystalline Diamond Films

et al. 2010

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Thin polycrystalline diamond films were deposited on prepared (100) Si substrate by hot filament chemical vapor deposition using a mixture of hydrogen, propane-butane and argon. During investigations the gas flow of argon was varied from 100 sccm to 400 sccm. Scanning electron microscopy analysis revealed that the addition of argon to the gas phase influenced the growth rate and film structure. An increase of argon concentration provokes an increase in film porosity and decrease in crystalline facetting. The quality of these films was investigated with the use of the Raman spectroscopy.

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“…The heterogeneous growth can be divided into two main streams: growth of individual diamond crystals [40][41][42] or growth of a continuous diamond film [43,44]. For many years, diamond films attracted much more attention due to their technological applications.…”

Section: Microwave Plasma Chemical Vapor Deposition Of Diamondmentioning

confidence: 99%

“…Of particular interest is the ability to deposit particles with low defect density, with well defined morphology and size, which are well dispersed over the substrate, allowing individual addressing and manipulation. This is essentially a new scientific challenge since most of applications to date required very high nucleation density [36,42,44]. In particular, synthesis of nanodiamond of optimum size and with optical and quantum properties approaching that of the best quality single crystal diamond has not yet been accomplished.…”

Section: Introductionmentioning

confidence: 99%

Novel Single Photon Emitters Based on Color Centers in Diamond

Aharonovich¹,

Castelletto²,

Prawer³

2011

AIP Conference Proceedings

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Exploitation of emerging quantum technologies requires efficient fabrication of key building blocks. Single photon sources are one of these fundamental constituents that are presently pushing the bounds of existing materials and fabrication techniques. Color centers in diamond are very attractive in this respect since they are the only photostable solid-state single photon emitters operating at room temperature known to date.The Nitrogen-Vacancy (NV) complex is one example of such an optical center and has been subject to intensive research due to the availability of optical readout of its individual electronic spin state. However, the NV center has fundamental limitations: strong phonon coupling of the excited state which results in a broad photoluminescence spectrum (~ 100 nm) of which the zero-phonon line makes up only 4%. Emission of single photons in the zero phonon line is then extremely weak, typically on the order of a few thousands of photons per second. Such count rates are insufficient for the realization of advanced quantum information processing protocols.To move beyond the limitations of the NV there is an emerging need to identify and fabricate novel diamond based single photon emitters with improved photo-physical characteristics. Development of such emitters is the main goal of this thesis.We first concentrate on the recent progress in materials science and fabrication techniques of high quality nanodiamond crystals. We demonstrate the ability to grow high quality, submicron sized diamond crystals with a control over their final size and density using a microwave assisted chemical vapor deposition.We then study two methodologies to engineer diamond based single photon emitters in the grown nanodiamonds. In the first, nickel is implanted into the substrate onto which the nanocrystals are subsequently grown. During the diamond growth, the substrate is slightly etched and the nickel atoms diffuse and incorporate into the growing crystals. In the second we employ direct ion implantation of nickel into already deposited individual diamond nanocrystals. Optical and correlation spectroscopy measurements reveal that these methodologies are effective to fabricate nickel related single photon emitters, with zero phonon lines centered in the near infra-red and a short excited state lifetime (~3 ns).ii Furthermore, the ability of diamond to host various luminescence centers prompted the discovery of a new class of ultra bright single photon emitters. These new emitters found in diamond crystals grown on sapphire substrate and assigned to chromium, which is present in the substrate and incorporated into the crystal during the growth. Nanodiamonds hosting these centers deliver outstanding performance such as narrow photoluminescence in the near infra-red and ultra bright single photon emission with count rate of ~ 3.2×10 6 counts/s -the brightest single photon source known to date.Importantly, some of the emitters exhibit a photon statistics without any photon bunching at saturation, indicating a two-...

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Mechanisms of CVD diamond nucleation and growth on mechanically scratched Si(100) surfaces

Abstract: PACS. 81.05.Tp Fullerenes and related materials; diamonds, graphite, 81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, etc.), 82.65.-i Surface and interface chemistry,

Cited by 52 publications

References 1 publication

Effects of the bias enhanced nucleation hot-filament chemical-vapor deposition parameters on diamond nucleation on iridium

Effects of the bias enhanced nucleation hot-filament chemical-vapor deposition parameters on diamond nucleation on iridium

The Influence of Argon on the Deposition and Structure of Polycrystalline Diamond Films

Novel Single Photon Emitters Based on Color Centers in Diamond

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