2004
DOI: 10.1016/j.optmat.2003.12.005
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Mechanisms of green emission from ZnO films prepared by rf magnetron sputtering

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Cited by 68 publications
(21 citation statements)
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“…Nevertheless, there were some zinc or oxygen ions still existed as interstitial in ZnO film, which might act as non-radiative recombination centers and reduce the emission intensity. As reported, 14 the improved crystallinity can decrease the non-radiation recombination and increase the radiation recombination for carriers and avail the existence of the free exciton. Similar results were also obtained in this study.…”
Section: Resultsmentioning
confidence: 62%
“…Nevertheless, there were some zinc or oxygen ions still existed as interstitial in ZnO film, which might act as non-radiative recombination centers and reduce the emission intensity. As reported, 14 the improved crystallinity can decrease the non-radiation recombination and increase the radiation recombination for carriers and avail the existence of the free exciton. Similar results were also obtained in this study.…”
Section: Resultsmentioning
confidence: 62%
“…ZnO is a promising material for light emitting [5], and it is very important to prepare both p-type and n-type ZnO of high quality [6]. The n-type ZnO films with different donors as dopant have been prepared by sputtering [7][8][9].…”
Section: Introductionmentioning
confidence: 99%
“…2(c) presents the near band-edge (NBE) emission spectra of 15 mmol, 5 mmol, and 1 mmol Na-doped ZnO NWs at T ¼ 10 K. It is well-known that a PL spectrum of undoped ZnO usually provides two main peaks of NBE (w380 nm) and green (w530 nm) emissions. The origin of the green emission is attributed to oxygen vacancies and Zinc interstitials [22,23]. However, the inset of Fig.…”
Section: Resultsmentioning
confidence: 94%