The ultraviolet emission mechanism of ZnO thin film fabricated by sol–gel technology

Hsieh, Pei-Shan; Chen, Y. C.; Kao, K. C.; Lee, M. S.; Cheng, Chien‐Chuan

doi:10.1016/j.jeurceramsoc.2007.02.053

Cited by 52 publications

(26 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The intensity of this UV emission peak increases monotonously with increase of annealing temperatures. As the increase in the UV emission is associated with the grain and crystal orientation [24], this can be further analysed as, with increase of the annealing temperatures, there is a reduction in the grain boundaries and the number of particles on the surface of ZnO nanoparticles. Consequently, the number of non-radiative transitions and deep level defects are supressed together, and thereby UV emission intensity has increased [6].…”

Section: Photoluminescencementioning

confidence: 99%

Annealing effects on the structural and optical properties of ZnO nanoparticles with PVA and CA as chelating agents

Mallika

Reddy

2015

J Adv Ceram

View full text Add to dashboard Cite

Abstract:The effects of annealing temperatures and chelating agents on the structural and optical properties of ZnO nanoparticles were investigated. The average particle size of ZnO nanoparticles increased with increase of annealing temperatures. The decrease of the full width at half maximum (FWHM) with increasing annealing temperatures inferred increase of particle/grain growth. The grain sizes were also observed to be increased with increase of annealing temperatures. From the absorption spectra of the samples, the absorption was red-shifted and the energy band gap was blue-shifted with increase of annealing temperatures. A sharp UV emission peak was observed and the intensity of this peak increased with annealing temperatures corresponding to the high crystallinity in the samples. At high annealing temperature of 700 ℃, ZnO exhibited a less intense deep level emission. This negligible deep level emission was attributed to the oxygen vacancies created at higher annealing temperatures.

show abstract

Section: Photoluminescencementioning

confidence: 99%

Annealing effects on the structural and optical properties of ZnO nanoparticles with PVA and CA as chelating agents

Mallika

Reddy

2015

J Adv Ceram

View full text Add to dashboard Cite

show abstract

“…These micro-pore structures are certain to appear on the sol-gel synthesized ZnO thin films. 25) Notably, some nucleus-like structure was found on the grain surface (Fig. 3).…”

Section: Structural Characteristicsmentioning

confidence: 97%

“…22) In general, the quality of the ZnO films was able to be improved by increasing the annealing temperature. [23][24][25] However, the crystallization mechanism of the ZnO thin film began to deteriorate at 700 C. The main reason is that variations in the grain boundary energy made some of the grains grow unusually and destroyed the crystallization of the ZnO thin film under higher crystallization temperatures.…”

Section: Structural Characteristicsmentioning

confidence: 99%

“…9) Therefore, several investigations have prepared UV photodetectors using sol-gel synthesized ZnO thin films. 10,11) However, how the crystallization of sol-gel ZnO thin film affects the optoelectronic characteristics has still not been investigated. In addition, almost all the photodetector devices used interdigital (IDT) circular structures as contact electrodes, 12,13) and the effect of the spiral configuration is worthy of further investigation.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Optoelectronic Characteristics of UV Photodetector Based on ZnO Nanopillar Thin Films Prepared by Sol-Gel Method

et al. 2009

View full text Add to dashboard Cite

ZnO thin films were prepared on a quartz substrate by sol-gel method and a UV photodetector was constructed on the ZnO thin films, with a circular spiral structure in contact with 30 nm IrO 2 electrodes. The ZnO thin films were crystallized at various crystallized temperature (600$700 C) for 1 hour in pure oxygen atmosphere, and were then analyzed by X-ray diffraction (XRD) and the scanning electron microscopy (SEM) to investigate the thin film crystallized structures. From photoluminescence (PL) and I-V measurement, the 650 C thin film not only possessed a better crystallization but also had nanopillar structures that revealed an excellent characteristic of UV photodetector.

show abstract

“…The large exothermic peak at around 373°C is associated with the formation of ZnO. 19) In the case of ZnO-ZrO2 precursor gel with [Zn]/[Zr] of 80/20, the large exothermic peak at around 380°C was observed. The films with zirconia component exhibited the higher peak temperature than ZnO gel.…”

Section: Characterizationmentioning

confidence: 99%

ZnO-ZrO2 films with good UV-shielding properties prepared by a single step sol-gel method

Hayashi

Yoshida²,

Suzuki

2009

J. Ceram. Soc. Japan

View full text Add to dashboard Cite

The ultraviolet emission mechanism of ZnO thin film fabricated by sol–gel technology

Cited by 52 publications

References 15 publications

Annealing effects on the structural and optical properties of ZnO nanoparticles with PVA and CA as chelating agents

Annealing effects on the structural and optical properties of ZnO nanoparticles with PVA and CA as chelating agents

Optoelectronic Characteristics of UV Photodetector Based on ZnO Nanopillar Thin Films Prepared by Sol-Gel Method

ZnO-ZrO2 films with good UV-shielding properties prepared by a single step sol-gel method

Contact Info

Product

Resources

About