Mechanisms of layer growth during molecular beam epitaxy of semiconductor films

Joyce, B. A.; Shitara, Tetsuya; Fahy, M.R.; Satô, Kenji; Neave, J.H.; Fawcett, P.N.; Kamiya, Itaru; Zhang, X.M.

doi:10.1016/0921-5107(94)09003-3

Cited by 4 publications

(1 citation statement)

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“…While some studies analyze InAs heteroepitaxy on nanopatterned GaAs(001), there is a lack of knowledge on InAs growth on nanopatterned GaAs(111)A. The InAs/GaAs(111)A system is characterized by a low binding energy of In adatom sites [5] and slow In-Asx (x = 2, 4) reaction kinetics leading to a high In adatom mobility [6] and preference for 2D layer growth on planar GaAs(111)A [7,8]. These characteristics may provide the ground for the realization of tailored InAs nanostructures on nanopatterned GaAs(111)A.…”

Section: Introductionmentioning

confidence: 99%

InAs heteroepitaxy on nanopillar-patterned GaAs (111)A

Kunnathully

Riedl

Trapp

et al. 2020

Journal of Crystal Growth

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Heteroepitaxy on nanopatterned substrates is a means of defect reduction at semiconductor heterointerfaces by exploiting substrate compliance and enhanced elastic lattice relaxation resulting from reduced dimensions. We explore this possibility in the InAs/GaAs(111)A system using a combination of nanosphere lithography and reactive ion etching of the GaAs(111)A substrate for nano-patterning of the substrate, yielding pillars with honeycomb and hexagonal arrangements and varied nearest neighbor distances. Substrate patterning is followed by MBE growth of InAs at temperatures of 150 -350 C and growth rates of 0.011 nm/s and 0.11 nm/s. InAs growth in the form of nano-islands on the pillar tops is achieved by lowering the adatom migration length by choosing a low growth temperature of 150 C at the growth rate 0.011 nm/s. The choice of a higher growth rate of 0.11 nm/s results in higher InAs island nucleation and the formation of hillocks concentrated at the pillar bases due to a further reduction of adatom migration length. A common feature of the growth morphology for all other explored conditions is the formation of merged hillocks or pyramids with well-defined facets due to the presence of a concave surface curvature at the pillar bases acting as adatom sinks.

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Section: Introductionmentioning

confidence: 99%