Mechanisms of Plasma‐Enhanced Silicon Nitride Deposition Using SiH4 /  N 2 Mixture

Dun, Haiping; Pan, Paihung; White, F. R.; Douse, Richard W.

doi:10.1149/1.2127682

Cited by 149 publications

(49 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…increase of SiH 4 /N 2 flow ratio [12]. For the deposition rate of the SiN films, the initial slight increase can be explained by the disintegration of rich radicals due to the plasma effect [13]. Rich radicals supply materials needed for the formation of the SiN film and allow the deposition process to continue.…”

Section: Methodsmentioning

confidence: 99%

Refractive index properties of SiN thin films and fabrication of SiN optical waveguide

et al. 2006

View full text Add to dashboard Cite

SiN thin films having excellent surface morphology for the optical device application were synthesized using a plasma enhanced chemical vapor deposition (PECVD) method at low temperature (350 • C) using silane (SiH 4 ) and nitrogen (N 2 ). The effects of the SiH 4 /N 2 flow ratio, rf power and annealing on the SiN films were investigated. The optical and structural properties of SiN films were characterized using an ellipsometry, a fourier-transform infrared spectroscopy (FT-IR), and an atomic force microscope (AFM). The refractive index increased from 1.6 to 2.3 as the SiH 4 /N 2 ratio was increased from 0.17 to 1.67. The rms surface roughness decreased from 14.1 to 3.6Å after post-deposition annealing process performed at 800 • C for 1hr in an air ambient. We could fabricate straight waveguides based on a three layer structure and have no problems with step coverage.

show abstract

Section: Methodsmentioning

confidence: 99%

Refractive index properties of SiN thin films and fabrication of SiN optical waveguide

et al. 2006

View full text Add to dashboard Cite

show abstract

“…A similar conclusion is described for a PECVD with a parallel plate reactor. [14] The deposition rate R dep in Figure 2a increases by increasing the ICP-power and above an ICP-power of around 500 W the deposition rate tends to saturate. An explanation for the saturation is that the precursor gases SiH 4 and N 2 are completely dissociated.…”

Section: Resultsmentioning

confidence: 97%

Depositon of Dielectric Films with Inductively Coupled Plasma‐CVD in Dependence on Pressure and Two RF‐Power‐Sources

Jatta

Haberle

Klein

et al. 2009

Plasma Processes & Polymers

View full text Add to dashboard Cite

This paper presents the investigations of thin dielectric silicon oxide (SiOx) and silicon nitride (SiNx) films deposited below 100 °C by a plasma enhanced chemical vapour deposition (PECVD) using an inductively coupled plasma (ICP)‐source. The influence of the deposition pressure and the applied RF‐power to the plasma from the ICP‐source and a second RF‐power at substrate electrode on the characteristics of the deposited films are studied. The investigated characteristics are refractive index R.I. at 632 nm, deposition rate Rdep, stress σ and etching rate Retch in buffered hydrofluoric acid (BHF). Measurements from electron spectroscopy for chemical analysis (ESCA) support the investigations. The results are discussed and compared with other PECVD deposition methods. A significant influence of the RF‐generator connected to substrate electrode on etching rate and hence on film quality is identified for SiOx but the converse effect is identified for SiNx‐films.

show abstract

“…The addition of this specific material was chosen because PECVD SiN has more defects than LPCVD SiN [11].…”

Section: Resultsmentioning

confidence: 99%

The sensitivity enhancement for the radiation sensor based on Film Bulk Acoustic-Wave Resonator

Oiler

Qiu

Zhu

et al. 2011

2011 16th International Solid-State Sensors, Actuators and Microsystems Conference

View full text Add to dashboard Cite

This paper describes the new design and material selection used to improve the sensitivity of ionizing radiation sensing with a zinc oxide based Film Bulk Acoustic-Wave Resonator (FBAR). Prior results [1] demonstrated that the parallel resonant frequency of the FBAR decreased after irradiation due to radiationinduced charge trapping in the SiN. Here, by employing Plasma Enhanced Chemical Vapor Deposited (PECVD) silicon nitride (SiN) within a two layer SiN configuration, we were able to increase the sensitivity by over two orders of magnitude. The maximum sensitivity of 2300 kHz/krad was demonstrated and is the highest radiation sensitivity of resonant sensors known to the authors.

show abstract

Mechanisms of Plasma‐Enhanced Silicon Nitride Deposition Using SiH4 / N 2 Mixture

Cited by 149 publications

References 16 publications

Refractive index properties of SiN thin films and fabrication of SiN optical waveguide

Refractive index properties of SiN thin films and fabrication of SiN optical waveguide

Depositon of Dielectric Films with Inductively Coupled Plasma‐CVD in Dependence on Pressure and Two RF‐Power‐Sources

The sensitivity enhancement for the radiation sensor based on Film Bulk Acoustic-Wave Resonator

Contact Info

Product

Resources

About