The fabrication procedures and characteristics of several thin-film p-CuInSe2/n-CdS heterojunction solar cells are presented. Two modes of operation (illumination through CuInSe2 or through CdS) are discussed. Efficiencies in the range of 4–5% are reported, under 100 mW/cm2 tungsten-halogen illumination for 1.2-cm2 devices. Included are the spectral response and J-V characteristics for these photovoltaic junctions.

The mechanism of plasma‐enhanced vapor deposition of silicon nitride is studied by varying process parameters, such as substrate temperature, rf power, reactant gas ratio, and total pressure. The film composition (Si, N, O, and H) is determined by electron microprobe and infrared analysis. From these analyses, it is established that the film composition is determined not only by the reactant gas ratio, but also by a combined function of the rf power false(Wfalse) and total pressure false(Pfalse) in terms of Wnormalx/P , with x a system‐dependent factor. The dependence of film composition on Wnormalx/P can be related to the radical generation processes. The substrate temperature is found to affect the film composition as well. Greater substrate temperature produces films with less hydrogen and more nitrogen, and hence, higher density. The film dielectric property and plasma etching rate are both studied and found to be dependent on the film composition. Finally, a three‐step deposition mechanism, namely, radical generation, radical adsorption, and adatom rearrangement, is proposed to explain the reaction scheme, and an ion incorporation mechanism is proposed to explain the change of film physical properties.

No abstract

As the minimum VLSI feature size continues to scaie down to the 0.1-0.2-ju.m regime, the need for iow-resistance iocai interconnections wiii become increasingiy critical. Although reduction in the MOSFET channel length will remain the dominant factor in achieving higher circuit performance, existing local interconnection materials will impose greater than acceptable performance limitations. We review the state-of-the-art salicide and polycide processes, with emphasis on work at IBM, and discuss the limitations that pertain to future implementations in high-performance VLSI circuit applications. A brief review of various silicide-based and tungsten-based approaches for forming local interconnections is presented, along with a more detailed description of a tungsten-based "damascene" local interconnection approach.

No abstract