Thin-film CuInSe2/CdS heterojunction solar cells

Kazmerski, Lawrence L.; White, F. R.; Morgan, G. K.

doi:10.1063/1.89041

Cited by 254 publications

(68 citation statements)

References 8 publications

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“…The properties of several I-III chalcopyrite compounds are also suitable for photovoltaic applications and amongst them the most promising include copper-indium-diselenide (CuInSe 2 ) often called CIS, copper-gallium-diselenide (CuGaSe 2 ) called CGS, their mixed alloys copper-indium gallium-diselenide (Cu(In,Ga)Se 2 ) called CIGS and copper-indiumdisulfide (CuInS 2 ). The first PV devices of copper chalcopyrite appeared in 1976 (Kazmerski et al, 1976) and since then it was not until the early 1990s that rapid improvements increased efficiencies to over 16 % (Gabor et al, 1994). Even though the commercial production of CIGS began in 2007, there are now a number of companies with 10 -30 MW/year capacities (Wolden et al, 2011).…”

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confidence: 99%

Performance of Photovoltaics Under Actual Operating Conditions

Makrides¹,

Zinßer²,

Norton³

et al. 2012

Third Generation Photovoltaics

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mentioning

confidence: 99%

Performance of Photovoltaics Under Actual Operating Conditions

Makrides¹,

Zinßer²,

Norton³

et al. 2012

Third Generation Photovoltaics

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“…Its ternary zinc-blende alloys such as MgCdTe and MgZnTe have been considered as potential candidates for low-cost, high efficiency, multi-junction thin film solar cell materials to complement existing CdTe and Cu(In,Ga)Se 2 solar materials [1][2][3] . The use of these alloys for high efficiency solid-state light-emission devices has also attracted much attention [4][5][6] .…”

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First-principles study of defect properties of zinc blende MgTe

et al. 2011

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We studied the general chemical trends of defect formation in MgTe using first-principles band structure methods. The formation energies and transition energy levels of intrinsic defects and extrinsic impurities and some defect complexes in zinc-blende MgTe were calculated systematically using a new hybrid scheme. The limiting factors for p-type and n-type doping in MgTe were investigated. Possible solutions to overcome the doping limitation of MgTe are proposed. The best p-type dopant is suggested to be N with nonequilibrium growth process and the best n-type dopant is suggested to be I with its doping complex VMg+4IT e.

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“…Subsequent studies [82,83] showed evidence of significant optical absorption at energies below this fundamental absorption edge. Characterization of polycrystalline CIS absorber films suitable for devices almost always indicate a significantly lower effective bandgap of ~0.90 eV [84], apparently a consequence of significant collection of carriers generated by absorption in these band-tails. It has been suggested that the widely reported variations in the optical properties of CIS materials are a direct consequence of variations in composition [85].…”

Section: Optical Properties Of Ternary Cu-iii-vi Materialsmentioning

confidence: 99%

Processing of CuInSe2-Based Solar Cells: Characterization of Deposition Processes in Terms of Chemical Reaction Analyses. Final Report, 6 May 1995 - 31 December 1998

Anderson¹,

Stanbery²

2001

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This project was initiated after the Boeing Company decided to terminate its photovoltaic research and development efforts, and donated some research equipment to UF. Billy Stanbery, who was part of the Boeing team, decided then to enroll at UF to pursue a Ph.D degree. As such these events constituted a rare direct technology transfer from industry to a university. This helped to preserve more than the published legacy of the solar cell efforts at Boeing, and jump-started a comprehensive, multifaceted, and multidisciplinary copper indium diselenide solar cell research effort at UF. 5-15 Micro-Raman scattering spectra of islands on two indium-rich CIS films grown on GaAs (100). The uppermost curve is from an island "pool" on a sodium-dosed film and the lower two are single and averaged spectra from isolated islands on the sample without sodium shown in Figure 5- field. It focused primarily on the physical and opto-electronic properties of the general class of I-III-VI2 and II-IV-V2 compound semiconductors. More recent reviews specifically oriented towards CIS materials and electronic properties [2][3][4][5][6] are also recommended reading for those seeking to familiarize themselves with key research results in this field.There are also a number of excellent books and reviews on photovoltaic device physics [7,8], on the general subject of solar cells and their applications [9,10], and others specifically oriented towards thin-film solar cells [11,12] Researchers have not always been careful to reserve the use of the compound designation CuInSe2 for single-phase material of the designated stoichiometry, an imprecision that is understandable in view of the difficulty in discriminating CuInSe2 from some other compounds in this material system, as will be discussed in detail elsewhere in this treatise. The compound designations such as CuInSe2 will be reserved herein for reference to single-phase material of finite solid solution extent, and multiphasic or materials of indeterminate structure composed of copper, indium, and selenium will be referred to by the customary acronym, in this case CIS. 3 This review begins with an overview of the physical properties of the principal copper ternary chalcogenides utilized for PV devices, including their thermochemistry, crystallography, and opto-electronic properties. All state-ofthe-art devices rely on alloys of these ternary compounds and employ alkali impurities, so the physical properties and effects of these additives will be presented, with an emphasis on their relevance to electronic carrier transport properties. This foundation will provide a basis from which to address the additional complexities and variability resulting from the plethora of materials processing methods and device structures which have been successfully employed to fabricate high efficiency PV devices utilizing absorbers belonging to this class of materials. Phase Chemistry of Cu-III-VI Material SystemsSignificant technological applications exist for Ag-III-VI2 compounds as non-linear optical mat...

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Thin-film CuInSe2/CdS heterojunction solar cells

Cited by 254 publications

References 8 publications

Performance of Photovoltaics Under Actual Operating Conditions

Performance of Photovoltaics Under Actual Operating Conditions

First-principles study of defect properties of zinc blende MgTe

Processing of CuInSe2-Based Solar Cells: Characterization of Deposition Processes in Terms of Chemical Reaction Analyses. Final Report, 6 May 1995 - 31 December 1998

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