Silicides and local interconnections for high-performance VLSI applications

Abstract

As the minimum VLSI feature size continues to scaie down to the 0.1-0.2-ju.m regime, the need for iow-resistance iocai interconnections wiii become increasingiy critical. Although reduction in the MOSFET channel length will remain the dominant factor in achieving higher circuit performance, existing local interconnection materials will impose greater than acceptable performance limitations. We review the state-of-the-art salicide and polycide processes, with emphasis on work at IBM, and discuss the limitations that pertain to future implementations in high-performance VLSI circuit applications. A brief review of various silicide-based and tungsten-based approaches for forming local interconnections is presented, along with a more detailed description of a tungsten-based "damascene" local interconnection approach.

Nitriding study of titanium silicide intermetallics obtained by mechanical alloying

“…Its low electrical resistivity, high thermal stability, and chemical and structural compatibility (small lattice mismatch) with silicon substrates have resulted in a variety of applications as contacts, gate electrodes, and interconnects in very large scale integration (VLSI) circuits [8,9]. TiSi 2 can be formed in a self-aligned fashion (SALICIDE process), which implies a two-step annealing of Ti films deposited on Si substrates [10].…”

Systematic and random variability analysis of two different 6T-SRAM layout topologies

“…Both layouts have been proposed in compliance with the Design Rules provided by FreePDK45. It is worth pointing out that our topologies have not implemented local interconnect [15] as this kit does not provide it and which would help to achieve a smaller cell area. We measured both layouts using the smallest dimensions for this technology.…”

Ab initio study of phase transformations in transition-metal disilicides

“…In future, these materials may significantly improve the thermal efficiency of energy conversion systems such as aircraft engines [1]. Furthermore, TiSi 2 and CoSi 2 films already found technological applications in electronic circuit fabrication [6,7].…”