Mechanisms of surface nanostructuring of Al2O3 and MgO by grazing incidence irradiation with swift heavy ions

Karlušić, Marko; Rymzhanov, R.A.; O’Connell, J.H.; Brockers, Lara; Luketić, Kristina Tomić; Siketić, Zdravko; Fazinić, Stjepko; Dubček, Pavo; Jakšić, Milko; Provatas, G.; Medvedev, Nikita; Волков, А. Е.; Schleberger, Marika

doi:10.1016/j.surfin.2021.101508

Cited by 10 publications

(21 citation statements)

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“…Similar to the Al 2 O 3 , well-developed ion tracks (albeit with a groove-like morphology) have also been found recently on the surface of MgO after irradiation with 23 MeV I at a grazing incidence angle [19]. In that case, the electronic stopping of 8 keV/nm was much lower than the previously reported thresholds for ion track formation of between 15 and 18 keV/nm [31,32,[34][35][36].…”

Section: Ion Irradiation Effects In Mgosupporting

confidence: 78%

“…Electronic stopping powers for these two ion beams are 5.9 keV/nm and 4.6 keV/nm, respectively. These values are much lower than the 9 keV/nm electronic stopping power value of 23 MeV I from our previous study, from which an image of an unirradiated surface has also been shown [19]. Here, we also observe well-developed, although rather short ion tracks.…”

Section: Ion Irradiation Effects In Al 2 Ocontrasting

confidence: 73%

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High-Energy Heavy Ion Irradiation of Al2O3, MgO and CaF2

et al. 2022

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High-energy heavy ion irradiation can produce permanent damage in the target material if the density of deposited energy surpasses a material-dependent threshold value. It is known that this threshold can be lowered in the vicinity of the surface or in the presence of defects. In the present study, we established threshold values for Al2O3, MgO and CaF2 under the above-mentioned conditions, and found those values to be much lower than expected. By means of atomic force microscopy and Rutherford backscattering spectrometry in channelling mode, we present evidence that ion beams with values of 3 MeV O and 5 MeV Si, despite the low density of deposited energy along the ion trajectory, can modify the structure of investigated materials. The obtained results should be relevant for radiation hardness studies because, during high-energy ion irradiation, unexpected damage build-up can occur under similar conditions.

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Section: Ion Irradiation Effects In Mgosupporting

confidence: 78%

Section: Ion Irradiation Effects In Al 2 Ocontrasting

confidence: 73%

High-Energy Heavy Ion Irradiation of Al2O3, MgO and CaF2

et al. 2022

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“…The movie they attached as supplemental material demonstrates nano-hillock formation of CaF 2 irradiated by 200 MeV Au. Some of the above same researchers teamed with Karlušić et al [27] to research Al 2 O 3 and MgO irradiated under grazing incidence with an I beam of 23 MeV. In this study, they found grooves surrounded with nano-hillocks on MgO surfaces and smoother, roll-like discontinuous structures on the surfaces of Al 2 O 3 .…”

Section: Introductionmentioning

confidence: 62%

“…The animation of the formation process of the nano-hillock of CaF 2 presented by Rymzhanov et al [26] suggests that a strong Coulomb interaction plays an important role in forming the nano-hillock structure with single crystalline form. Karlušić et al [27] simulated the formation process of the nano-hillock of MgO and Al 2 O 3 with two different charge states, equilibrium charge state Z eff = +8.47 and fixed charge state Z eff = +6. They showed that the nano-hillock was formed for the equilibrium charge state, whereas a very small nano-hillock (Al 2 O 3 ) or no nano-hillock (MgO) was formed for the fixed charge state.…”

Section: Resultsmentioning

confidence: 99%

“…For the present case of CeO 2 , the equilibrium charge state of Ce is Z eff = +2.7 and the fixed charge state is Z eff = +4, indicating a weak Coulomb interaction. In addition, it should be noted that hillock formation experiment/simulation for the system with a free surface was done with 23 MeV I ion giving Se= 8.53 keV/nm (MgO) and 9.1 keV/nm (Al 2 O 3 ), estimated by the SRIM code [27], whereas the irradiation experiment/simulation for the bulk system was done with 167 MeV Xe ion giving Se= 21 keV/nm (MgO), 24.9 keV/nm (Al 2 O 3 ) [25]. This leads to another possible mechanism for nano-hillock formation: moderately strong beam irradiation to a strong Coulomb interaction system with a free surface.…”

Section: Resultsmentioning

confidence: 99%

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Nanopore Formation in CeO2 Single Crystal by Ion Irradiation: A Molecular Dynamics Study

Sasajima

Kaminaga

Ishikawa

et al. 2021

QuBS

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The nanopore formation process that occurs by supplying a thermal spike to single crystal CeO2 has been simulated using a molecular dynamics method. As the initial condition, high thermal energy was supplied to the atoms in a nano-cylinder placed at the center of a fluorite structure. A nanopore was generated abruptly at around 0.3 ps after the irradiation, grew to its maximum size at 0.5 ps, shrank during the time to 1.0 ps, and finally equilibrated. The nanopore size increased with increasing effective stopping power gSe (i.e., the thermal energy deposited per unit length in the specimen), but it became saturated when gSe was 0.8 keV/nm or more. This finding will provide useful information for precise control of the size of nanopores. Our simulation confirmed nanopore formation found in the actual experiment, irradiation of CeO2 with swift heavy ions, but could not reproduce crystalline hillock formation just above the nanopores.

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Examining Different Regimes of Ionization‐Induced Damage in GaN Through Atomistic Simulations

Sequeira

Djurabekova

Nordlund

et al. 2022

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The widespread adoption of gGaN in radiation‐hard semiconductor devices relies on a comprehensive understanding of its response to strongly ionizing radiation. Despite being widely acclaimed for its high radiation resistance, the exact effects induced by ionization are still hard to predict due to the complex phase‐transition diagrams and defect creation‐annihilation dynamics associated with group‐III nitrides. Here, the Two‐Temperature Model, Molecular Dynamics simulations and Transmission Electron Microscopy, are employed to study the interaction of Swift Heavy Ions with GaN at the atomic level. The simulations reveal a high propensity of GaN to recrystallize the region melted by the impinging ion leading to high thresholds for permanent track formation. Although the effect exists in all studied electronic energy loss regimes, its efficiency is reduced with increasing electronic energy loss, in particular when there is dissociation of the material and subsequent formation of N2 bubbles. The recrystallization is also hampered near the surface where voids and pits are prominent. The exceptional agreement between the simulated and experimental results establishes the applicability of the model to examine the entire electronic energy loss spectrum. Furthermore, the model supports an empirical relation between the interaction cross sections (namely for melting and amorphization) and the electronic energy loss.

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Mechanisms of surface nanostructuring of Al2O3 and MgO by grazing incidence irradiation with swift heavy ions

Cited by 10 publications

References 50 publications

High-Energy Heavy Ion Irradiation of Al2O3, MgO and CaF2

High-Energy Heavy Ion Irradiation of Al2O3, MgO and CaF2

Nanopore Formation in CeO2 Single Crystal by Ion Irradiation: A Molecular Dynamics Study

Examining Different Regimes of Ionization‐Induced Damage in GaN Through Atomistic Simulations

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