Megarad total ionizing dose and single event effects test results of a radhard-by-design 0.25 micron ASIC [space applications]

Hartwell, M.; Hafer, C.; Milliken, Peter; Farris, T.

doi:10.1109/redw.2004.1352914

Cited by 8 publications

(5 citation statements)

References 2 publications

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“…Additional redundancy techniques can be applied where higher SEE hardness is required. A typical test case in 0.25 m CMOS, exceeding most mission requirements, is reported in [12] as follows:…”

Section: B Integrated Cmos Solar Cell Test Resultsmentioning

confidence: 99%

Design of self-powered wireless system-on-a-chip sensor nodes for hostile environments

Barnhart

Vladimirova

Sweeting

2008

2008 IEEE International Symposium on Circuits and Systems (ISCAS)

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A new dimension of wireless sensor network architecture design is emerging where hundreds to thousands of ultra-light low-cost sensor nodes are required to collectively perform a spectrum of distributed remote sensing missions in hostile conditions, predominantly those encountered in space. Research is underway to investigate the feasibility of fabricating survivable self-powered sensor nodes monolithically with commercially available SiGe BiCMOS technology. This paper presents simulation and test chip results of two novel and essential building blocks: a photovoltaic/solar cell power supply and an environmentally tolerant microprocessor, based on radiation hardening by design and asynchronous logic

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Section: B Integrated Cmos Solar Cell Test Resultsmentioning

confidence: 99%

Design of self-powered wireless system-on-a-chip sensor nodes for hostile environments

Barnhart

Vladimirova

Sweeting

2008

2008 IEEE International Symposium on Circuits and Systems (ISCAS)

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“…As long as the basic approach is followed, the hardness of the developed library should be comparable to similar libraries. For example, a recent design and test campaign in 0.25 m CMOS achieved the following typical results, which are suitable for most bare die SoC applications in hostile environments [7]:…”

Section: B Rhbd Library Designmentioning

confidence: 96%

Radiation Hardening by Design of Asynchronous Logic for Hostile Environments

Barnhart

Vladimirova

Sweeting

et al. 2009

IEEE J. Solid-State Circuits

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Abstract-A wide range of emerging applications is driving the development of wireless sensor node technology towards a monolithic system-on-a-chip implementation. Of particular interest are hostile environment scenarios where radiation and thermal extremes exist. Radiation hardening by design has been recognized for over a decade as an alternative open-source circuit design approach to mitigate a spectrum of radiation effects, but has significant power and area penalties. Similarly, asynchronous logic design offers potential power savings and performance improvements, with a tradeoff in design complexity and a lesser area penalty. These side effects have prevented wider acceptance of both design approaches. A case study supporting the development of monolithic system-on-a-chip wireless sensor nodes is presented. Synchronous, hardened, and asynchronous/hardened implementations of a textbook microprocessor in 0.35 m austriamicrosystems SiGe BiCMOS technology are compared. The synergy of this novel asynchronous/hardened design approach is confirmed by simulation and hardware results.Index Terms-Asynchronous logic, environmental tolerance, radiation hardening by design, system-on-a-chip.

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“…Figure 6 shows the ID(VG) characteristics before irradiation and after 128 krad(Si) for both NMOS and PMOS individual transistors. DVT is negative since the radiation-induced trapped charges are mainly positive whatever the type of the transistor [7].…”

Section: Tid Characterization Of Individual Transistorsmentioning

confidence: 99%

“…Total ionizing dose (TID) is known to enhance the susceptibility of circuits to single-event effects (SEE) by modifying the electrical characteristics of individual transistors inside the exposed circuit [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15]. In the case of static random-access memories (SRAMs), the radiation-induced defects and trapped charges, mainly in oxide and dielectric layers and at their interfaces with the semiconductor, alter the electrical conditions within the SRAM cells, affecting transistor threshold voltages and consequently SRAM stability.…”

Section: Introductionmentioning

confidence: 99%

Impact of total ionizing dose on the alpha-soft error rate in FDSOI 28 nm SRAMs

Moindjie,

Munteanu,

Autran

et al. 2023

Microelectronics Reliability

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Megarad total ionizing dose and single event effects test results of a radhard-by-design 0.25 micron ASIC [space applications]

Cited by 8 publications

References 2 publications

Design of self-powered wireless system-on-a-chip sensor nodes for hostile environments

Design of self-powered wireless system-on-a-chip sensor nodes for hostile environments

Radiation Hardening by Design of Asynchronous Logic for Hostile Environments

Impact of total ionizing dose on the alpha-soft error rate in FDSOI 28 nm SRAMs

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