Megasonic Excited Ozonized Water for the Cleaning of Silicon Surfaces

Ojima, Senri; Kubo, Kazuki; Kato, Masayuki; Takada, Masayuki; Ohmi, Tadahiro

doi:10.1149/1.1837616

Cited by 33 publications

(18 citation statements)

References 3 publications

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“…New improvements are continually initiated aiming at a better cleaning efficiency, a lower cost, and a strict control of the environmental regulations [3,4]. After removal of the native oxide with a HF treatment, the resulting hydrophobic surface covered with Si-H x terminal bonds is successively treated in an alkaline ammonia + hydrogen peroxide mixture called SC1, to oxidize the inorganic contaminants and generate a thin chemical oxide layer, surrounding both the particles and the substrate surface.…”

Section: Introductionmentioning

confidence: 99%

Non uniformities of silicon oxide films grown in peroxide mixtures

Bertagna¹,

Petitdidier²,

Rochat³

et al. 2005

Journal of Electroanalytical Chemistry

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Section: Introductionmentioning

confidence: 99%

Non uniformities of silicon oxide films grown in peroxide mixtures

Bertagna¹,

Petitdidier²,

Rochat³

et al. 2005

Journal of Electroanalytical Chemistry

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“…최근에는 실리 콘 웨이퍼의 구경이 대구경화 됨에 따라 세정 횟수가 증 가하였으며 세정 과정에 사용되는 세정액 양 또한 증가 함에 소자 생산 원가가 증가하게 되며, 세정 공정에 사 용된 세정액 처리 비용 또한 증가하게 되어 효과적인 세 정액 선정이 필요한 상황이다. [4][5] 일반적인 습식 방법으 로 현재 반도체 공정에서 RCA 세정법 [6][7] 과 Dilute HF (DHF), 8) Buffered Oxide Etching(BOE)…”

Section: 서 론unclassified

Comparison on the Physical & Chemical Characteristics in Surface of Polished Wafer and Epi-Layer Wafer

김¹,

서²

2014

Korean. J. Mater. Res.

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Physical and chemical changes in a polished wafer and in 2.5 µm & 4 µm epitaxially grown Si layer wafers (Epilayer wafer) after surface treatment were investigated. We characterized the influence of surface treatment on wafer properties such as surface roughness and the chemical composition and bonds. After each surface treatment, the physical change of the wafer surface was evaluated by atomic force microscopy to confirm the surface morphology and roughness. In addition, chemical changes in the wafer surface were studied by X-ray photoemission spectroscopy measurement. Changes in the chemical composition were confirmed before and after the surface treatment. By combined analysis of the physical and chemical changes, we found that diluted hydrofluoric acid treatment is more effective than buffered oxide etching for SiO 2 removal in both polished and Epi-Layer wafers; however, the etch rate and the surface roughness in the given treatment are different among the polished 2.5 µm and 4 µm Epi-layer wafers in spite of the identical bulk structural properties of these wafers. This study therefore suggests that independent surface treatment optimization is required for each wafer type, 2.5 µm and 4 µm, due to the meaningful differences in the initial surface chemical and physical properties.

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“…The silicon wafer surface is cleaned following wet processes using ultrapure water, various chemical reagents, and very often megasonic wave (1)(2)(3)(4)(5)(6)(7)(8)(9)(10), Additionally, microbubbles generated by the megasonic wave have been used for various cleaning techniques (11,12). Thus, the method and conditions for its effective use have been studied by many researchers (6,9,10,13,14) based on the particle level evaluation of cleaned silicon wafer surface.…”

Section: Introductionmentioning

confidence: 99%

Water and Bubble Motions Under Megasonic Wave in a Silicon Wafer Wet Cleaning Bath

et al. 2009

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The influences of a megasonic wave on water and bubble motions in a wet cleaning bath used for 300 mm-diameter silicon wafers were studied. The water motion in the entire bath was observed using a tracer of water-soluble blue-colored ink. The megasonic wave accelerated the water motion in the entire bath, although the water motion under no megasonic wave tended to be localized. The motion of small bubbles generated by the megasonic wave was also traced over the entire wafer surface. The bubble transport rate was shown to be increased by the megasonic wave and water flow.

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Megasonic Excited Ozonized Water for the Cleaning of Silicon Surfaces

Cited by 33 publications

References 3 publications

Non uniformities of silicon oxide films grown in peroxide mixtures

Non uniformities of silicon oxide films grown in peroxide mixtures

Comparison on the Physical & Chemical Characteristics in Surface of Polished Wafer and Epi-Layer Wafer

Water and Bubble Motions Under Megasonic Wave in a Silicon Wafer Wet Cleaning Bath

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