Non uniformities of silicon oxide films grown in peroxide mixtures

Bertagna, Valérie; Petitdidier, S.; Rochat, N.; Rouchon, D.; Besson, P.; Erre, R.; Chemla, M.

doi:10.1016/j.jelechem.2004.10.028

Cited by 6 publications

(5 citation statements)

References 25 publications

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“…The decisive point is that oxidation of H-terminated Si surfaces with H 2 O 2 solution (c(H 2 O 2 ) = 9.5 mol L –1 , pH = 3.3) proceed faster than in all other acidic H 2 O 2 -HCl mixtures. This is in accordance with literature data reporting increasing stability of Si–H x ( x = 1, 2, 3) species with lower pH values. , This is explained by H exchange reactions with the solution. The HF-H 2 O 2 mixtures exhibit pH values between 1.5 and 2.5.…”

Section: Results and Discussionsupporting

confidence: 93%

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Etching Silicon with HF-H₂O₂-Based Mixtures: Reactivity Studies and Surface Investigations

Gondek

Lippold

Röver³

et al. 2014

J. Phys. Chem. C

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In semiconductor and photovoltaic industries numerous process steps deal with etching and silicon surface modification. The present study focuses on the reactivity of HF-H2O2-based mixtures toward silicon surfaces in a wide range of concentrations. The generally very moderate reactivity is investigated regarding kinetic aspects and the silicon dissolution reactions. The activation energy of silicon dissolution in HF-H2O2 mixtures is determined to be ∼50 kJ/mol, which supports a surface reaction controlled mechanism. This interpretation is checked by oxidation experiments of Si surfaces with HF-free H2O2 solutions. Resulting silicon surfaces were characterized by means of diffuse reflection Fourier transform infrared spectroscopy and photoelectron spectroscopy. Surface properties give hints for an “electrochemical” silicon oxidation. Furthermore, the oxidation behavior of different H2O2 solutions is compared to that of HNO3 solutions. All results suggest kinetically limited silicon dissolution in HF-H2O2 mixtures and hole injection into the silicon surface to be the rate-determining part of the reaction process.

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Section: Results and Discussionsupporting

confidence: 93%

“…This is in accordance with literature data reporting increasing stability of Si−H x (x = 1, 2, 3) species with lower pH values. 50,51 This is explained by H exchange reactions with the solution. The HF-H 2 O 2 mixtures exhibit pH values between 1.5 and 2.5.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

Etching Silicon with HF-H₂O₂-Based Mixtures: Reactivity Studies and Surface Investigations

Gondek

Lippold

Röver³

et al. 2014

J. Phys. Chem. C

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“…Unlike thermal oxides, chemically prepared oxides on Si are known to be electronically defective 50 and compositionally inhomogeneous. [51][52][53][54] Thus, the data are consistent with surface defect sites dominating the energetics and kinetics of interfacial charge-transfer at such interfaces. The measured forward bias current for p-type CH 3 -Si(111)/ Hg contacts was >10 -2 A at V ) 0.01 V (A s ∼ 0.05 cm -2 ); hence, a quantitative analysis of the room temperature J-V behavior for p-type CH 3 -Si(111)/Hg contacts was not attempted.…”

Section: Resultssupporting

confidence: 58%

“…Additionally, the erratic log(| Z| ) − log( f ) responses demonstrate the inherent variability, irreproducibility, and low electronic quality of chemically oxidized Si surfaces. Unlike thermal oxides, chemically prepared oxides on Si are known to be electronically defective and compositionally inhomogeneous. − Thus, the data are consistent with surface defect sites dominating the energetics and kinetics of interfacial charge-transfer at such interfaces.…”

Section: Resultsmentioning

confidence: 67%

Electrical Properties of Junctions between Hg and Si(111) Surfaces Functionalized with Short-Chain Alkyls

et al. 2007

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Metal-semiconductor junctions between Hg and chemically modified n-and p-Si(111) surfaces have been prepared and analyzed using current-voltage and differential capacitance-voltage methods. To understand the role of the interfacial dipole on interfacial charge transfer, silicon surfaces were modified with either nonstoichoimetric oxide (SiO x ), terminal monohydride, short (C n H 2n+1 -, n ) 1, 2, 3) saturated alkyl chains, or propynyl (CH 3 -CtC-) groups. X-ray photoelectron spectra of the modified Si electrode surfaces taken before and after exposure to Hg contacts showed no evidence of irreversible chemical interactions between the Si and the Hg. Hg/Si contacts made using H-terminated Si(111) surfaces exhibited Schottky junctions having barrier heights (Φ b ) that were consistent with the known surface electron affinity of Si and the work function of Hg. In contrast, Si coated with a thin, chemically grown oxide formed Hg/Si junctions having barrier heights suggestive of Fermi level pinning. Si(111) surfaces modified with methyl groups yielded Hg junctions having barrier heights in accord with expectations based on the electron affinity (3.67 eV) and surface dipole (0.38 eV) measured on such surfaces by photoemission spectroscopy, attesting to the degree of chemical control that can be exerted over the barrier heights of such systems by surface functionalization methods. Incomplete coverages of functional groups produced by alkylation with ethyl or iso-propyl groups did not greatly impact the observed values of Φ b relative to Φ b values observed for CH 3 -terminated Si(111) surfaces. However, the observed variation in Φ b between nominally identical samples increased as the number of carbons in the functionalizing alkyl group increased. Junctions between Hg and Si(111) surfaces modified with propynyl groups showed nearly identical behavior to that of CH 3 -Si(111)/Hg contacts, both in average Φ b values and standard deviation between samples. The behavior of Si/Hg interfaces modified with short organic functional groups is consistent with the efficacy and utility of passivated surfaces in modifying the properties of surface-based Si devices.

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“…This process causes high density of interface states (D it ) at the oxidized Si interfaces. 14) Especially in alkali RCA I, the chemical oxide grow more rapidly than in acidic RCA II, 15) which contributes to a higher D it . 14) This significantly reduces the passivation effect.…”

mentioning

confidence: 99%

Improved passivation effect at the amorphous/crystalline silicon interface due to ultrathin SiO_x layers pre-formed in chemical solutions

Bian

Zhang

Guo³

et al. 2014

Appl. Phys. Express

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To improve the passivation effect at a-Si:H/c-Si interface in heterojunction (HJ) solar cells, ultrathin SiOx layers with a thickness of approximately 2 nm were pre-formed on c-Si surfaces in chemical solutions. It was demonstrated that the SiOx layers pre-formed in hot de-ionized water and hydrochloric acid solutions improve effective carrier lifetime, and it is further enhanced through a post annealing process. When the thin SiOx layers were applied to HJ solar cells, increase in both Voc and Jsc was achieved, implying the improved interface quality for these HJ solar cells, as compared with the reference without the SiOx layer.

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Non uniformities of silicon oxide films grown in peroxide mixtures

Cited by 6 publications

References 25 publications

Etching Silicon with HF-H₂O₂-Based Mixtures: Reactivity Studies and Surface Investigations

Etching Silicon with HF-H₂O₂-Based Mixtures: Reactivity Studies and Surface Investigations

Electrical Properties of Junctions between Hg and Si(111) Surfaces Functionalized with Short-Chain Alkyls

Improved passivation effect at the amorphous/crystalline silicon interface due to ultrathin SiO_x layers pre-formed in chemical solutions

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Non uniformities of silicon oxide films grown in peroxide mixtures

Cited by 6 publications

References 25 publications

Etching Silicon with HF-H2O2-Based Mixtures: Reactivity Studies and Surface Investigations

Etching Silicon with HF-H2O2-Based Mixtures: Reactivity Studies and Surface Investigations

Electrical Properties of Junctions between Hg and Si(111) Surfaces Functionalized with Short-Chain Alkyls

Improved passivation effect at the amorphous/crystalline silicon interface due to ultrathin SiOx layers pre-formed in chemical solutions

Contact Info

Product

Resources

About

Etching Silicon with HF-H₂O₂-Based Mixtures: Reactivity Studies and Surface Investigations

Etching Silicon with HF-H₂O₂-Based Mixtures: Reactivity Studies and Surface Investigations

Improved passivation effect at the amorphous/crystalline silicon interface due to ultrathin SiO_x layers pre-formed in chemical solutions