2003
DOI: 10.1002/crat.200310081
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Melt‐crucible wetting behavior in semiconductor melt growth systems

Abstract: The wetting angles of several semiconductor-substrate combinations that are of practical importance for crystal growth have been measured: Ga-GaSb-Sb on fused quartz; Ge on fused quartz and carbon-based substrates, each with a selection of roughness; Si on fused quartz plates and on plates coated with fused quartz, Si 3 N 4 , and BN powders. The Ga-GaSb-Sb system showed no significant dependence of the wetting angle on the composition despite a large composition dependence of the surface tension. For Ge, the e… Show more

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Cited by 15 publications
(4 citation statements)
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“…contact angles θ much higher than 90 • ) which is a favourable condition for obtaining a spontaneous detachment of solidified silicon from the crucible walls under the effect of thermo-mechanical stresses. 1,2 In specific cases, for instance when processing silicon ribbons by solidification on a foreign substrate passing through a liquid bath, good wetting (θ 90 • ) is required for the substrate material. 3 In this case dense materials must be employed in order to avoid infiltration of open porosities by silicon.…”
Section: Introductionmentioning
confidence: 99%
“…contact angles θ much higher than 90 • ) which is a favourable condition for obtaining a spontaneous detachment of solidified silicon from the crucible walls under the effect of thermo-mechanical stresses. 1,2 In specific cases, for instance when processing silicon ribbons by solidification on a foreign substrate passing through a liquid bath, good wetting (θ 90 • ) is required for the substrate material. 3 In this case dense materials must be employed in order to avoid infiltration of open porosities by silicon.…”
Section: Introductionmentioning
confidence: 99%
“…One aspect that has so far not been investigated is the use of an intermediate layer between the silicon and the silica tube to moderate stress, remove impurities and provide a gradient index of refraction. Although there are some wetting studies of molten silicon available, they center around materials suitable as crucibles for melting [15] and directional recrystallization [16,17]. Recent studies on the use of silicon carbide for removal of oxygen [13], and purification of silicon in low-dimensional structures [18] suggested the use of a reactive species for this purpose.…”
Section: Introductionmentioning
confidence: 99%
“…Moreover a detailed physical-chemical understanding of reactive wetting between liquid silicon melt and SiO 2 is important for the advanced crystal growth of silicon [16][17][18][19][20][21][22][23][24][25][26][27]. Several wetting experiments with silicon melt on fused quartz have been reported in the literature [25][26][27], and complex dynamical spreading effects have been observed.…”
Section: Introductionmentioning
confidence: 99%