Meltback etching and regrowth of GaAs/AlGaAs in liquid phase epitaxy for fabrication of microlens

Cho, Gyu-Seog; Hahm, Sung−Ho; Kwon, Young–Se

doi:10.1007/bf02661662

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Lpe For Shaped Crystal Growth1

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“…There are numerous implementations of selective growth or meltback in LPE to make semiconductor structures with various optical features; see, for example, King and SpringThorpe [406] and Hahm et al [407]. Cho et al [409] described a meltback-etching and regrowth process using AlGaAs/GaAs LPE on masked GaAs substrates that produced hemispherical microlens structures for LEDs (see the chapter entitled "LEDs by LPE" for more details). Tapered GaAs-based optical waveguides with controllable profiles were made by selective LPE [408].…”

Section: Lpe For Shaped Crystal Growthmentioning

confidence: 99%