Melting and crystallization behavior of low-pressure chemical-vapor-deposition amorphous Si films during excimer-laser annealing

Abstract

Articles you may be interested inCrystallization kinetics of ultrathin amorphous Si film induced by Al metal layer under thermal annealing and pulsed laser irradiation

Observation of explosive crystallization during excimer laser annealing using in situ time-resolved optical reflection and transmission measurements

“…Hence, the thickness of a-Si thin film is not a seriously factor affecting the observation of EC phenomenon by TRORT measurement. EC oscillations in the TRORT spectra have also been observed for ion-implanted Si wafers and LPCVD-grown a-Si thin films by Lowndes et al (1986), Bruines et al (1986) and Voogt et al (2004), respectively. Obviously, these experimental results show that EC phenomenon is not exclusively restricted to PECVD-grown a-Si thin films.…”

“…However, these methods detrimentally affected the time resolution. In addition, Voogt et al (2004) deduced that noise would affect the observations for EC during ELA using TRORT measurements. The lasers most commonly employed to deliver probing light in time-resolved optical diagnostic measurements are He-Ne and diode lasers.…”

Thickness dependence of properties of excimer laser crystallized nano-polycrystalline silicon

“…9 The ability of excimer lasers to crystallize a very thin layer of a-Si:H in the order of 100 nm 1 becomes a limitation for photovoltaics, since films of the order of 1 m are necessary for adequate light absorption. 16 Although films of 200-nmthick a-Si:H, with low hydrogen concentrations deposited by low-pressure chemical vapor deposition 17 have been reported to be crystallized by EL, due to high absorption properties of a-Si:H at UV, the attainable polysilicon thickness is inadequate for solar cell applications. The indirect band gap of crystalline silicon requires thicker films compared to a-Si:H.…”

Laser‐induced self organization of silicon–germanium hillocks for field emission displays

“…The solidification behavior of Si under laser crystallization conditions is considered to be well understood [1,2]. Incorporating Ge into the Si, however, gives rise to new effects such as segregation [3,4] and growth instabilities.…”