Melting and crystallization of nanocrystalline silicon microwires through rapid self-heating

Bakan, Gökhan; Cywar, Adam; Silva, Helena; Gokirmak, Ali

doi:10.1063/1.3159877

Cited by 22 publications

(15 citation statements)

References 14 publications

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“…During the maximum ac voltage amplitude, a sudden increase in current is observed suggesting that the wire resistance decreases significantly due to onset of wire melting ( Figure 2). 13 The next point shows no measurable current indicating wire breakage. Once the I-V characteristic of a wire is constructed from the V-t and I-t characteristics (Figure 2(a)), the wire is modeled using COMSOL Multiphysics.…”

Section: Methodsmentioning

confidence: 99%

Extraction of temperature dependent electrical resistivity and thermal conductivity from silicon microwires self-heated to melting temperature

Bakan

Adnane

Gokirmak

et al. 2012

Journal of Applied Physics

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Temperature-dependent electrical resistivity, q(T), and thermal conductivity, k(T), of nanocrystalline silicon microwires self-heated to melt are extracted by matching simulated current-voltage (I-V) characteristics to experimental I-V characteristics. Electrical resistivity is extracted from highly doped p-type wires on silicon dioxide in which the heat losses are predominantly to the substrate and the self-heating depends mainly on q(T) of the wires. The extracted q(T) decreases from 11.8 mX cm at room-temperature to 5.2 mX cm at 1690 K, in reasonable agreement with the values measured up to $650 K. Electrical resistivity and thermal conductivity are extracted from suspended highly doped n-type silicon wires in which the heat losses are predominantly through the wires. In this case, measured q(T) (decreasing from 20.5 mX cm at room temperature to 12 mX cm at 620 K) is used to extract q(T) at higher temperatures (decreasing to 1 mX cm at 1690 K) and k(T) (decreasing from 30 W m À1 K À1 at room temperature to 20 W m À1 K À1 at 1690 K). The method is tested by using the extracted parameters to model wires with different dimensions. The experimental and simulated I-V curves for these wires show good agreement up to high voltage and temperature levels. This technique allows extraction of the electrical resistivity and thermal conductivity up to very high temperatures from self-heated microstructures. V C 2012 American Institute of Physics. [http://dx.

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Section: Methodsmentioning

confidence: 99%

Extraction of temperature dependent electrical resistivity and thermal conductivity from silicon microwires self-heated to melting temperature

Bakan

Adnane

Gokirmak

et al. 2012

Journal of Applied Physics

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show abstract

“…Melting is expected to start at one side of the wire due to significant Thomson effect under high current densities [11]- [13]. While the wire is molten, surface tension forces the wire to take a cylindrical form, and the diffusion of silicon from the wire to its contact pads which are at a lower temperature results in thinning of the wire if a pulse duration is sufficient [10]. As the voltage pulse is terminated, the wire begins to solidify starting from 0741-3106/$26.00 © 2010 IEEE its contact pads, keeping its newly acquired geometry.…”

Section: Methodsmentioning

confidence: 99%

“…This same experimental setup, without the load resistor, has been used for experiments on electrical annealing of the wires and growth from melt at a micrometer scale [10]. These microwires can be completely melted with a single 1-μs ∼20-V (E ∼ 25 kV/cm and J ≥ 20 MA/cm 2 ) pulse.…”

Section: Methodsmentioning

confidence: 99%

“…As the voltage pulse is terminated, the wire begins to solidify starting from 0741-3106/$26.00 © 2010 IEEE its contact pads, keeping its newly acquired geometry. The 5% volume increase upon solidification [14] results in excess Si at the midpoint that leads to a lump [10]. With the introduction of a load resistor and a parasitic capacitance into the experimental setup [ Fig.…”

Section: Methodsmentioning

confidence: 99%

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Nanosecond Pulse Generation in a Silicon Microwire

Cywar

Bakan

Silva

et al. 2010

IEEE Electron Device Lett.

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We report the generation of trapezoidal current pulses by applying a dc voltage to a single nanocrystalline silicon microwire through a load. The wire is expected to be physically disconnecting and reconnecting at a constriction near its midpoint as a result of volume change in repeated solid-liquid phase transitions. A scanning electron microscope image and the wire's electrical characteristics suggest that the wire is partially molten at the time of disconnection. The current pulses rise from 0 to 7 mA and have widths of 13.48 ± 0.65 ns, a repetition rate of 9.12 ± 0.06 MHz, rise/fall times ≤ 350 ps, a peak power density of ∼1.9 kW/mm 2 , and a very consistent pulse shape.

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“…However, thermal movement of nanowires between the SOI islands and their consequent rupture at temperatures ≥150°C excludes conventional furnace annealing (details of the thermal behavior were investigated by Sainiemi et al [75]). Nevertheless, it was reported that current-driven self-heating processes can be applied to recrystallize Si nanowires [76]. Therefore, to lower the resistivity of the fabricated Nanowires a two terminal set-up providing voltage while measuring the current was used to investigate possible DC annealing.…”

Section: Direct Current Annealingmentioning

confidence: 99%

Nanostructures by Mass-Separated FIB

Bischoff

Böttger

Philipp

et al. 2013

Lecture Notes in Nanoscale Science and Technology

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The introduction of mass-separated systems in the field of focused ion beams significantly increases the area of application in nanotechnology due to the availability of a broad spectrum of ions with the same advantages compared to classical Ga instruments. A short description of the configuration of a mass-separated FIB tool is given as well as the fundamentals of alloy liquid metal ion sources. Examples of application include patterned tailoring of functional surfaces and ioninduced phase transformation in thin layers, in particular the Si nanowire fabrication by FIB implantation and subsequent wet-chemical, anisotropic etching and the FIB lithography of thin ta-C films. Furthermore, the ion beam synthesis (IBS) of CoSi 2 nanostructures by Co-FIB writing and annealing, and the modification of surface morphology by various mono-and polyatomic projectiles in a broad energy and temperature range in different materials are described and discussed.

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Melting and crystallization of nanocrystalline silicon microwires through rapid self-heating

Abstract: Extraction of temperature dependent electrical resistivity and thermal conductivity from silicon microwires selfheated to melting temperature

Cited by 22 publications

References 14 publications

Extraction of temperature dependent electrical resistivity and thermal conductivity from silicon microwires self-heated to melting temperature

Extraction of temperature dependent electrical resistivity and thermal conductivity from silicon microwires self-heated to melting temperature

Nanosecond Pulse Generation in a Silicon Microwire

Nanostructures by Mass-Separated FIB

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