Melting and defect generation in chemical vapor deposited diamond due to irradiation with 100 MeV Au + and Ag + ions

Misra, D.S.; Palnitkar, Umesh; Tyagi, Pawan; Singh, Manoj K.; Titus, Elby; Avasthi, D.K.; Vasa, Parinda; Ayyub, Pushan

doi:10.1016/j.tsf.2005.11.029

Cited by 5 publications

(2 citation statements)

References 33 publications

(18 reference statements)

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“…With these clues in mind and our experience in CVD processes 15 16 17 18 19 , we designed a hot filament thermal CVD (HFTCVD) system simply by placing an alumina tube between the windings of tantalum (Ta) filament and explored it for growth of graphene films on variety of substrates. By placing of the substrate inside the alumina tube we thought to create a gradient in gas composition and gas flow rate that would interestingly leads to graphene growth 20 .…”

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confidence: 99%

Large-area high-throughput synthesis of monolayer graphene sheet by Hot Filament Thermal Chemical Vapor Deposition

Hawaldar

Merino

Correia

et al. 2012

Sci Rep

151

115

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We report hot filament thermal CVD (HFTCVD) as a new hybrid of hot filament and thermal CVD and demonstrate its feasibility by producing high quality large area strictly monolayer graphene films on Cu substrates. Gradient in gas composition and flow rate that arises due to smart placement of the substrate inside the Ta filament wound alumina tube accompanied by radical formation on Ta due to precracking coupled with substrate mediated physicochemical processes like diffusion, polymerization etc., led to graphene growth. We further confirmed our mechanistic hypothesis by depositing graphene on Ni and SiO2/Si substrates. HFTCVD can be further extended to dope graphene with various heteroatoms (H, N, and B, etc.,), combine with functional materials (diamond, carbon nanotubes etc.,) and can be extended to all other materials (Si, SiO2, SiC etc.,) and processes (initiator polymerization, TFT processing) possible by HFCVD and thermal CVD.

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mentioning

confidence: 99%

Large-area high-throughput synthesis of monolayer graphene sheet by Hot Filament Thermal Chemical Vapor Deposition

Hawaldar

Merino

Correia

et al. 2012

Sci Rep

151

115

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“…The most important property of them all is the radiation hardness of diamond is very high (43eV atomic displacement energy whereas Si has 21eV). The diamond detectors (large area pads: calorimetry; microstrips; pixel detectors ( Figure 8V)) when used under the radioactive environment of particle physics experiments, it has shown to sustain high fluence of pions, neutrons, electrons, protons, gamma rays, alpha particles etc under high beam energies [132][133][134][135][136][137][138]. SiC although being radiation hard and can be used at high temperatures but due to its interaction with neutrons, it can not be used as detector in the event of nuclear reactor accidents.…”

Section: Scd Detectors (Figure 9)mentioning

confidence: 99%

Microwave Plasma CVD Grown Single Crystal Diamonds - A Review

Mallik

2016

J. Coat. Sci. Technol.

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Diamond offers a range of unique properties, including wide band of optical transmission, highest thermal conductivity, stiffness, wear resistance and superior electronic properties. Such high-end properties are not found in any other material, so theoretically it can be used in many technological applications. But the shortcoming has been the synthesis of the diamond material in the laboratory for any meaningful use. Although microwave plasma chemical vapour deposited (MPCVD) has been in practice since 1980s for the diamond growth but it is in the past 7-8 years that its potential has been realised by the industry due to capability of MPCVD to deposit diamond, pure and fast, for commercial uses. There are many CVD techniques for growing diamond but among them MPCVD can only make single crystal diamond (SCD) effectively. SCD grown by MPCVD is also superior to other forms of diamond produced in the laboratory. For example, SCD is necessary for the best electronic properties-often outperforming the polycrystalline diamond (PCD), the high pressure high temperature (HPHT) diamond and the natural diamond. In many applications the short lateral dimensions of the lab-grown diamond available is a substantial limitation. Polycrystalline CVD diamond layers grown by hot filament CVD solved this problem of large area growth, but the presence of grain boundaries are not appropriate for many uses. On the other hand, there is still limitation in the area over which SCDs are grown by MPCVD, only upto 10-15 mm lateral sizes could have been achieved so far, while there are recipes which rapidly grow several mm thick bulk SCDs. This lateral size limitation of SCDs is primarily because of the small seed substrate dimension. Although natural and HPHT diamonds may not be suitable for the intended application, still they are routinely used as substrates on which SCD is deposited. But the problem lies in the availability of large area natural SCD seeds which are extremely rare and expensive. Moreover, large diamond substrate plates suitable for CVD diamond growth have not been demonstrated by HPHT because of the associated high economic risk in their fabrication and use. Other than lateral dimension, purity of SCD is also very important for technological use. Natural diamond is often strained and defective, and this causes twins and other problems in the CVD overgrowth or fracture during synthesis. In addition, dislocations which are prevalent in the natural diamond substrate are replicated in the CVD layer, also degrading its electronic properties. HPHT synthetic diamond is also limited in size, and generally is of poorer quality in the larger stones, with inclusions being a major problem. There will be much research interest in the next 10 years for the MPCVD growth of SCD. Purer and bigger SCDs will be tried to grow with faster and reproducible MPCVD recipes. Here the MPCVD growth of SCD is being reviewed keeping in mind its huge technological significance in the next decades or so. Discoveries of the commercial productions of silico...

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Orders of magnitude reduction in the thermal conductivity of polycrystalline diamond through carbon, nitrogen, and oxygen ion implantation

Scott

Hattar

Braun

et al. 2020

Carbon

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Melting and defect generation in chemical vapor deposited diamond due to irradiation with 100 MeV Au + and Ag + ions

Cited by 5 publications

References 33 publications

Large-area high-throughput synthesis of monolayer graphene sheet by Hot Filament Thermal Chemical Vapor Deposition

Large-area high-throughput synthesis of monolayer graphene sheet by Hot Filament Thermal Chemical Vapor Deposition

Microwave Plasma CVD Grown Single Crystal Diamonds - A Review

Orders of magnitude reduction in the thermal conductivity of polycrystalline diamond through carbon, nitrogen, and oxygen ion implantation

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