Memcapacitive properties of poly(3,4-ethylenedioxythiophene) modified electrodes

Martino, Nicolas; Randriamahazaka, Hyacinthe

doi:10.1016/j.elecom.2012.10.043

Cited by 5 publications

(1 citation statement)

References 20 publications

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“…Several materials, such as polyimide, carbon nanotubes, and DNA, have exhibited a multilevel resistance state. [4][5][6] Memcapacitive properties have been observed in polymer-based devices since Chua et al extended the notion of memristive systems to memcapacitive and meminductive elements in 2009, [7][8][9] which extended the available parameters of memory devices. In particular, Khiat et al exploited the coexistence of resistance and capacitance memory effects, 10,11) in which the switching trend of the resistance is correlated with that of the capacitance.…”

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confidence: 99%

Two-parameter multi-state memory device based on memristance and memcapacitance characteristics

Liu

Dong

Yan

et al. 2018

Appl. Phys. Express

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A device with an Al/copolymer/indium tin oxide structure is fabricated using a copolymer with a donor and acceptor structure. The memcapacitance characteristic corresponding to the single resistance state is found, and two-parameter storage is achieved. The device exhibits six capacitance states in three resistance states and excellent memory switching characteristics, including a low ON/OFF voltage, long retention time, and write-once-read-many-times and write-read-erase-read ability. The writing and reading of the capacitance and resistance states can be achieved by designing the appropriate voltage signal. These results provide a new approach for improving the storage density and information encryption.

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mentioning

confidence: 99%

Two-parameter multi-state memory device based on memristance and memcapacitance characteristics

Liu

Dong

Yan

et al. 2018

Appl. Phys. Express

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Independent Memcapacitive Switching Triggered by Bromide Ion Migration for Quaternary Information Storage

et al. 2019

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Memcapacitors are emerging as an attractive candidate for high‐density information storage due to their multilevel and adjustable capacitances and long‐term retention without a power supply. However, knowledge of their memcapacitive mechanism remains unclear and accounts for the limited implementation of memcapacitors for multilevel memory technologies. Here, repeatable and reproducible quaternary memories fabricated from hybrid perovskite (CH3NH3SnBr3) memcapacitors are reported. The device can be modulated to at least four capacitive states ranging from 0 to 169 pF with retention for 104 s. Impressively, an effective device yield approaching 100% for quaternary memory switching is achieved by a batch of devices; each state has a sufficiently narrow distribution that can be distinguished from the others and is superior to most multilevel memories that have a low device yield as well as an overlapping distribution of states. The memcapacitive switching stems from the modulated p–i–n junction capacitance triggered by Br− migration, as demonstrated by in situ element mapping, X‐ray photoelectron spectra, and frequency‐dependent capacitance measurements; this mechanism is different from the widely reported memristive switching involving filamentary conduction. The results provide a new way to produce high‐density information storage through memcapacitors.

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Dynamical nonlinear memory capacitance in biomimetic membranes

et al. 2019

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Two-terminal memory elements, or memelements, capable of co-locating signal processing and memory via history-dependent reconfigurability at the nanoscale are vital for next-generation computing materials striving to match the brain’s efficiency and flexible cognitive capabilities. While memory resistors, or memristors, have been widely reported, other types of memelements remain underexplored or undiscovered. Here we report the first example of a volatile, voltage-controlled memcapacitor in which capacitive memory arises from reversible and hysteretic geometrical changes in a lipid bilayer that mimics the composition and structure of biomembranes. We demonstrate that the nonlinear dynamics and memory are governed by two implicitly-coupled, voltage-dependent state variables—membrane radius and thickness. Further, our system is capable of tuneable signal processing and learning via synapse-like, short-term capacitive plasticity. These findings will accelerate the development of low-energy, biomolecular neuromorphic memelements, which, in turn, could also serve as models to study capacitive memory and signal processing in neuronal membranes.

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Memcapacitive properties of poly(3,4-ethylenedioxythiophene) modified electrodes

Cited by 5 publications

References 20 publications

Two-parameter multi-state memory device based on memristance and memcapacitance characteristics

Two-parameter multi-state memory device based on memristance and memcapacitance characteristics

Independent Memcapacitive Switching Triggered by Bromide Ion Migration for Quaternary Information Storage

Dynamical nonlinear memory capacitance in biomimetic membranes

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