Memory Behavior of an Al<sub>2</sub>O<sub>3</sub> Gate Dielectric Non-Volatile Field-Effect Transistor

Peng, Yue; Xiao, Wenwu; Han, Genquan; Liu, Yan; Liu, Fenning; Liu, Chen; Zhou, Yue; Yang, Nan; Zhong, Ni; Duan, Chun‐Gang; Hao, Yue

doi:10.1109/led.2020.3010363

Cited by 23 publications

(18 citation statements)

References 20 publications

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“…Most recently, extra charge retaining layers were incorporated into normal TFTs to obtain bipolar synaptic spiking behaviors [21], [22]. More importantly, systematic functionalities were also demonstrated on fieldeffect transistor-based synaptic device [23]- [25]. The versatile functionalities and the ability to mass integrate make TFTs idea building blocks for neuromorphic applications.…”

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confidence: 99%

Sputtered Oxide Thin-Film Transistors With Tunable Synaptic Spiking Behavior at 1 V

Zhang

Cai

et al. 2021

IEEE Trans. Electron Devices

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Indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) gated with sputtered silicon dioxide dielectric were fabricated. Under different sputtering pressures of silicon dioxide, the device is able to produce transfer curves from clockwise hysteresis to anticlockwise hysteresis, corresponding to different operation modes and thus adding complementary performance by the same material system and device structure. In the interface trapping mode, the transistor exhibited inhibitory synaptic spiking behavior induced by positive stimuli. In the electric doublelayer coupling mode, positive stimuli led to excitatory synaptic spiking behavior, while negative stimuli resulted in inhibitory synaptic spiking behavior. All the transistor and synaptic spiking behaviors are conducted within ±1 V range. Enriched functionality and ultralow operation voltage make sputtered SiO 2 -gated IGZO TFTs promising candidate for neuromorphic applications. Index Terms-1 V, oxide thin-film transistor (TFT), synaptic spiking behavior, synaptic transistor. I. INTRODUCTION T HIN-FILM transistors (TFTs) based on electrolyte gate dielectric have drawn particular attention in recent years, mainly due to their potential neuromorphic applications in brain-inspired computation beyond the traditional von Neumann architecture [1], [2]. Electrolyte is ion-conducting but electron-insulating material. In electrolyte-based TFTs, a positive gate voltage causes ion migration and accumulation at theManuscript

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confidence: 99%

Sputtered Oxide Thin-Film Transistors With Tunable Synaptic Spiking Behavior at 1 V

Zhang

Cai

et al. 2021

IEEE Trans. Electron Devices

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“…5(a) shows the measured polarization (P) vs. V loops of a TJM device by an axiACCT TF Analyzer 2000 system at a frequency of 1 kHz. Since the ferroelectric-like P is not completely screened by the electrodes, a depolarization field also exists in ZrO 2 , and it corresponds to the switching of dipoles consisting of V + O and negative charges [11]- [13]. The extracted evolution of the positive and negative remnant polarization (P r ) and coercive voltage (V c ) in Fig.…”

Section: Resultsmentioning

confidence: 99%

“…It indicates that the sheet density of V + Orelated dipoles is 8.1 × 10 12 cm −2 and 3.4 × 10 12 cm −2 , respectively. The positive/negative P r corresponds to the accumulation of V + O /negative charges near the ZrO 2 /semiconductor interface [11]- [13].…”

Section: Resultsmentioning

confidence: 99%

Amorphous ZrO₂ Tunnel Junction Memristor With a Tunneling Electroresistance Ratio Above 400

Liu

Peng

Liu

et al. 2021

IEEE Electron Device Lett.

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An amorphous ZrO 2 based tunneling junction memristor (TJM) with a tunneling electroresistance (TER) ratio above 400 is demonstrated. It is attributed to the modulation of tunneling barrier width induced by the accumulation of oxygen vacancies (V + O ) and negative charges near the ZrO 2 /semiconductor interface. The ferroelectric-like behaviors attributed to the voltage-modulated switching of the dipoles consisting of V + O and negative charges in ZrO 2 are characterized by a polarization-voltage test. The ZrO 2 TJM achieves a TER ratio above 400 under 2.5/-1.5 V at 100 ns write/erase pulse condition, over 10 4 cycles program/erase endurance, and > 10 4 s data retention.

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“…The underlying mechanism for the ferroelectric-like behaviors in this amorphous HfO 2 devices is similar to that for those devices in Refs. [ 8 , 9 ]. The extracted evolution of the remnant P ( P r ) and coercive voltage ( V c ) for the device during the endurance test is shown in Fig.…”

Section: Methodsmentioning

confidence: 99%

“…Recently, non-volatile field-effect transistors (NVFETs) utilizing amorphous Al 2 O 3 and ZrO 2 gate insulators were experimentally realized, which was attributed to the switchable polarization ( P ) induced by the voltage-modulation of the oxygen vacancy ( )-related dipoles [ 8 – 11 ]. The mechanism of voltage-modulation of in ferroelectric tunnel junctions was also demonstrated, which improved the tunneling electroresistance ratio of the device [ 12 ].…”

Section: Introductionmentioning

confidence: 99%

Synaptic Behaviors in Ferroelectric-Like Field-Effect Transistors with Ultrathin Amorphous HfO2 Film

et al. 2022

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We demonstrate a non-volatile field-effect transistor (NVFET) with a 3-nm amorphous HfO2 dielectric that can simulate the synaptic functions under the difference and repetition of gate voltage (VG) pulses. Under 100 ns write/erase (W/E) pulse, a memory window greater than 0.56 V and cycling endurance above 106 are obtained. The storied information as short-term plasticity (STP) in the device has a spiking post-synaptic drain current (ID) that is a response to the VG input pulse and spontaneous decay of ID. A refractory period after the stimuli is observed, during which the ID hardly varies with the VG well-emulating the bio-synapse behavior. Short-term memory to long-term memory transition, paired-pulse facilitation, and post-tetanic potentiation are realized by adjusting the VG pulse waveform and number. The experimental results indicate that the amorphous HfO2 NVFET is a potential candidate for artificial bio-synapse applications.

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Memory Behavior of an Al₂O₃ Gate Dielectric Non-Volatile Field-Effect Transistor

Cited by 23 publications

References 20 publications

Sputtered Oxide Thin-Film Transistors With Tunable Synaptic Spiking Behavior at 1 V

Sputtered Oxide Thin-Film Transistors With Tunable Synaptic Spiking Behavior at 1 V

Amorphous ZrO₂ Tunnel Junction Memristor With a Tunneling Electroresistance Ratio Above 400

Synaptic Behaviors in Ferroelectric-Like Field-Effect Transistors with Ultrathin Amorphous HfO2 Film

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Memory Behavior of an Al2O3 Gate Dielectric Non-Volatile Field-Effect Transistor

Cited by 23 publications

References 20 publications

Sputtered Oxide Thin-Film Transistors With Tunable Synaptic Spiking Behavior at 1 V

Sputtered Oxide Thin-Film Transistors With Tunable Synaptic Spiking Behavior at 1 V

Amorphous ZrO2 Tunnel Junction Memristor With a Tunneling Electroresistance Ratio Above 400

Synaptic Behaviors in Ferroelectric-Like Field-Effect Transistors with Ultrathin Amorphous HfO2 Film

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Memory Behavior of an Al₂O₃ Gate Dielectric Non-Volatile Field-Effect Transistor

Amorphous ZrO₂ Tunnel Junction Memristor With a Tunneling Electroresistance Ratio Above 400