Memory characteristics of Al2O3/LaAlO3/SiO2 multilayer structures with tunnel oxide thickness variation

Yong, Seung Hyun; Kim, Hyo June; Choi, Doo Jin

doi:10.1007/s10853-010-4562-9

Cited by 5 publications

(4 citation statements)

References 11 publications

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“…LaAlO 3 is a great example with almost no diffusion at conventional deposition temperatures, and the LaAlO 3 film has been successfully deposited on Si, − MgO, and SrTiO 3 − substrates. In addition, the LaAlO 3 film is a potential buffer layer for the growth of various perovskite films. − Furthermore, because of the low conduction band offset, LaAlO 3 can be utilized as a charge storage layer in the fields of charge trap flash devices . In particular, LaAlO 3 is a powerful candidate for high- k materials in advanced Si-based complementary metal-oxide-semiconductor (CMOS) devices , because of its own unique features. ,− …”

Section: Introductionmentioning

confidence: 99%

First-Principles Investigation of the Electronic Properties and Stabilities of the LaAlO₃ (001) and (110) (1 × 1) Polar Terminations

Chen

et al. 2015

J. Phys. Chem. C

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The first-principles thermodynamics characterization of the stabilities and electronic properties of the LaAlO3 (001) and (110) polar surfaces was systematically performed using density functional theory methods. Two types of polar surfaces, including the terminations along the (001) orientation (the LaO-and AlO2-terminated surfaces) and (110) orientation (the LaAlO-, O2-, La-, AlO-, and O-terminated surfaces),were considered in this study. The computational results of the charge redistributions and geometries confirm that the electronic structure change and surface reconstruction should be responsible for the cancellation of the macroscopic dipole moments of these polar terminations, which stabilizes them. The charge neutralization can also be achieved by the charge redistribution of surface atoms. Furthermore, using the surface grand potential method, in which the effect of the chemical environment on surface stability is considered, we constructed the stability phase diagram of the LaAlO3 (001) and (110) polar surfaces. The results indicate that only the O (110), LaO (001) and AlO2 (001) terminations have corresponding stability domains and can be considered targets in further experimental investigations.

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Section: Introductionmentioning

confidence: 99%

First-Principles Investigation of the Electronic Properties and Stabilities of the LaAlO₃ (001) and (110) (1 × 1) Polar Terminations

Chen

et al. 2015

J. Phys. Chem. C

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“…The crystallization of the film will generate grain boundaries, which can act as current leakage paths [18]. The excellent data retention characteristics of S1 should be attributed to the amorphous charge trapping layer [24] and variable potential barrier E B (0.8 to 1.6 eV), which suppress the leakage of trapped electrons toward the tunneling and blocking oxide. It is observed that S1 exhibits a faster program and erase speed than S2 and S3.…”

Section: Resultsmentioning

confidence: 99%

Electrical Characteristics of Charge Trap Flash Memory with a Composition Modulated (ZrO₂)_x(Al₂O₃)_1-xFilm

Tang¹,

Zhang²,

Jiang³

et al. 2015

Transactions on Electrical and Electronic Materials

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“…Recently, numerous technologies have been developed for the preparation of thin film or crystal embedded thin film devices [6][7][8]. Among various methods to prepare semiconductor or insulator films, atomic layer deposition (ALD), physical vapor deposition (PVD), and chemical vapor deposition (CVD) appear to be the most useful new technologies [9][10][11].…”

Section: Introductionmentioning

confidence: 99%

Controlled deposition of new organic ultrathin film as a gate dielectric layer for advanced flexible capacitor devices

Meena

Chu

Singh

et al. 2012

J Mater Sci: Mater Electron

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This letter describes a new organic (1-bromoadamantane) ultrathin film as gate dielectric, which was successfully deposited by sol-gel spin-coating process on a flexible polyimide substrate at room temperature. The metal-insulator-metal (MIM) device with organic (1-bromoadamantane) ultrathin (10 nm) film as gate dielectric layer operated at gate voltage of 5.0 V, showing a low leakage current density (5.63 9 10 -10 A cm -2 at 5 V) and good capacitance (2.01 fF lm -2 at 1 MHz). The chemical structure of the 1-bromoadamantane layer was investigated by Fourier transform infrared spectrometer. The excellent leakage current density and better capacitance, probably due to the presence of polar, non-polar, low-polar groups, and bromine atoms in ultrathin film. Practical properties of the film in MIM capacitor such as dielectric constant as well as bending result of leakage current density and breakdown voltage have been better related to such fundamental adhesion nature over flexible substrate. This permits estimation of the properties of new dielectric in thin film form and short lists of the best materials for low loss and good capacitance flexible capacitors could be drawn up in future.

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Memory characteristics of Al2O3/LaAlO3/SiO2 multilayer structures with tunnel oxide thickness variation

Cited by 5 publications

References 11 publications

First-Principles Investigation of the Electronic Properties and Stabilities of the LaAlO₃ (001) and (110) (1 × 1) Polar Terminations

First-Principles Investigation of the Electronic Properties and Stabilities of the LaAlO₃ (001) and (110) (1 × 1) Polar Terminations

Electrical Characteristics of Charge Trap Flash Memory with a Composition Modulated (ZrO₂)_x(Al₂O₃)_1-xFilm

Controlled deposition of new organic ultrathin film as a gate dielectric layer for advanced flexible capacitor devices

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Memory characteristics of Al2O3/LaAlO3/SiO2 multilayer structures with tunnel oxide thickness variation

Cited by 5 publications

References 11 publications

First-Principles Investigation of the Electronic Properties and Stabilities of the LaAlO3 (001) and (110) (1 × 1) Polar Terminations

First-Principles Investigation of the Electronic Properties and Stabilities of the LaAlO3 (001) and (110) (1 × 1) Polar Terminations

Electrical Characteristics of Charge Trap Flash Memory with a Composition Modulated (ZrO2)x(Al2O3)1-xFilm

Controlled deposition of new organic ultrathin film as a gate dielectric layer for advanced flexible capacitor devices

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Product

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First-Principles Investigation of the Electronic Properties and Stabilities of the LaAlO₃ (001) and (110) (1 × 1) Polar Terminations

First-Principles Investigation of the Electronic Properties and Stabilities of the LaAlO₃ (001) and (110) (1 × 1) Polar Terminations

Electrical Characteristics of Charge Trap Flash Memory with a Composition Modulated (ZrO₂)_x(Al₂O₃)_1-xFilm