Memory effect of CdSe∕ZnS nanoparticles embedded in a conducting poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene-vinylene] polymer layer

Li, Fushan; Son, Dong-Ick; Cha, Han-Moe; Seo, Seung-Mi; Kim, Bong-Jun; Kim, Hyuk-Ju; Jung, Jaehun; Kim, Tae Whan

doi:10.1063/1.2745219

Cited by 49 publications

(31 citation statements)

References 18 publications

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“…CdSe nanoparticles in between PB layers must have augmented conductance switching of PB molecules. Carrier confinement in nanoparticles (Jung et al 2006;Mohanta et al 2006;Das et al 2007;Li et al 2007;Verbakel et al 2007) may also result in higher on/off ratio in devices based on CdSe/PB. Degree of bistability can be quantified by calculating the on/off ratio as a function of voltage (figure 4b).…”

Section: Resultsmentioning

confidence: 99%

Enhancement of electrical bistability through semiconducting nanoparticles for organic memory applications

Das

Pal

2009

Phil. Trans. R. Soc. A.

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We report that an enhancement in electrical bistability in devices based on organic molecules can be achieved by the introduction of semiconducting nanoparticles. Here, devices based on alternate layers of a dye in the xanthene class and CdSe nanoparticles have been compared with devices based on the individual components. Results from dye/CdSe devices have yielded an appreciable enhancement in electrical bistability compared with those based on the dye or the nanoparticles. The enhancement is due to augmented carrier transport through the nanoparticles to the dye that consequently undergoes a change in its conformation, having a higher conductivity. We have evidenced read-only and random-access memory applications in the dye/nanoparticle hybrid system.

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Section: Resultsmentioning

confidence: 99%

Enhancement of electrical bistability through semiconducting nanoparticles for organic memory applications

Das

Pal

2009

Phil. Trans. R. Soc. A.

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“…[29][30][31][32][33] Most of these hybrid thin films are formed on a certain substrate by using a spin-coating technique, where the inorganic nanoparticles are randomly dispersed in the polymer layer. The morphology and uniformity of the hybrid films can be controlled by varying the precursor concentration and spin conditions.…”

Section: Electrical Memory Devicesmentioning

confidence: 99%

Electrical memory devices based on inorganic/organic nanocomposites

Kim

Yang²,

et al. 2012

NPG Asia Mater

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168

110

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Nonvolatile memory devices based on hybrid inorganic/organic nanocomposites have emerged as excellent candidates for promising applications in next-generation electronic and optoelectronic devices. Among the various types of nonvolatile memory devices, organic bistable devices fabricated utilizing hybrid organic/inorganic nanocomposites have currently been receiving broad attention because of their excellent performance with high-mechanical flexibility, simple fabrication and low cost. The prospect of potential applications of nonvolatile memory devices fabricated utilizing hybrid nanocomposites has led to substantial research and development efforts to form various kinds of nanocomposites by using various methods. Generally, hybrid inorganic/organic nanocomposites are composed of organic layers containing metal nanoparticles, semiconductor quantum dots (QDs), core-shell semiconductor QDs, fullerenes, carbon nanotubes, graphene molecules or graphene oxides (GOs). This review article describes investigations of and developments in nonvolatile memory devices based on hybrid inorganic/organic nanocomposites over the past 5 years. The device structure, fabrication and electrical characteristics of nonvolatile memory devices are discussed, and the switching and carrier transport mechanisms in the hybrid nonvolatile memory devices are reviewed. Furthermore, various flexible memory devices fabricated utilizing hybrid nanocomposites are described and their future prospects are discussed.

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“…This transition of electric current indicates the bipolar resistive switching nature of the asprepared Al/MeH-PPV:GO/ITO device. On the other hand, pure MeH-PPV device did not show any hysteresis curve with respect to the applied voltage bias [8]. Furthermore, the device shows an obvious degradation even after completing more than 100 consecutive cycles.…”

Section: Resultsmentioning

confidence: 86%

“…Li et al have investigated the carrier traps in the switching model of CdSe/ZnS nanoparticles, which is embedded with an active layer of MeH-PPV [8]. Patel et al have reported about the switching properties of MeH-PPV.…”

Section: Introductionmentioning

confidence: 99%

Organic Bistable Switching Memory Devices with MeH-PPV and Graphene Oxide Composite

Senthilkumar¹,

Kim

2015

Transactions on Electrical and Electronic Materials

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We have reported about bipolar resistive switching effect on Poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene]:Graphene oxide composite films, which are sandwiched between aluminum and indium tin oxide electrodes. In this case, I-V sweep curve showed a hysteretic behavior, which varied according to the polarity of the applied voltage bias. The device exhibited excellent switching characteristics, with the ON/OFF ratio being approximately two orders in magnitude. The device had good endurance (10 5 cycles without degradation) and long retention time (5 × 10 3 s) at room temperature. The bistable switching behavior varied according to the trapping and de-trapping of charges on GO sites; the carrier transport was described using the space-charge-limited current (SCLC) model.

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Memory effect of CdSe∕ZnS nanoparticles embedded in a conducting poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene-vinylene] polymer layer

Cited by 49 publications

References 18 publications

Enhancement of electrical bistability through semiconducting nanoparticles for organic memory applications

Enhancement of electrical bistability through semiconducting nanoparticles for organic memory applications

Electrical memory devices based on inorganic/organic nanocomposites

Organic Bistable Switching Memory Devices with MeH-PPV and Graphene Oxide Composite

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