Current-voltage measurements on the Al/[CdSe∕ZnS nanoparticles embedded in a hole-transporting poly(N-vinylcarbazole) (PVK) layer]/indium tin oxide (ITO)/glass structures at 300K showed a nonvolatile electrical bistability behavior. Capacitance-voltage (C-V) measurements on the Al/[CdSe∕ZnS nanoparticles embedded in a PVK layer]/ITO/glass structures at 300K showed a metal-insulator-semiconductor behavior with a flatband voltage shift due to the existence of the CdSe∕ZnS nanoparticles, indicative of trapping, storing, and emission of charges in the electronic states of the CdSe nanoparticles. Operating mechanisms for the Al/[CdSe∕ZnS nanoparticles embedded in the PVK layer]/ITO/glass devices are described on the basis of the C-V results.

Capacitance-voltage (C-V) measurements on Au/a conducting poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene-vinylene] polymer layer containing core/shell CdSe∕ZnS nanoparticles (hybrid layer)/indium tin oxide (ITO) coated glass and Al/hybrid layer/ITO coated glass capacitors at 300K showed metal-insulator-semiconductor behavior with a large flatband voltage shift. This shift was due to the existence of the CdSe∕ZnS nanoparticles, indicative of trapping, storing, and emission of charge carriers in the CdSe∕ZnS nanoparticles. Symmetric and asymmetric C-V characteristics appeared in the Al/hybrid layer/ITO coated glass and Au/hybrid layer/ITO coated glass capacitors, respectively. A dipolar carrier trapping model is proposed to explain the symmetric behavior in the C-V curve.

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