Memory effects in MIS structures based on silicon and polymethylmethacrylate with nanoparticle charge-storage elements

Mabrook, M.F.; Jombert, A.S.; Machin, S.E.; Pearson, Christopher; Kolb, Daniel; Coleman, Karl S.; Zeze, Dagou A.; Petty, Michael C.

doi:10.1016/j.mseb.2008.09.003

Cited by 17 publications

(12 citation statements)

References 14 publications

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“…[11][12][13][14][15] Many types of metallic nanoparticles have been used as charge storage elements in memory devices, such as silver (Ag), gold (Au), copper (Cu), and aluminum (Al). [12][13][14][15][16][17][18][19][20][21][22][23] Au nanoparticles have attracted a wide share of research attention due to their high work function and chemical stability characteristics compared with other metal nanoparticles. 17 To the best of our knowledge, all previous reports on utilization of Au nanoparticles for memory devices used chemical methods to synthesize those nanoparticles.…”

Section: Introductionmentioning

confidence: 99%

Electrical Characteristics of Hybrid-Organic Memory Devices Based on Au Nanoparticles

Nejm

Ayesh

Zeze

et al. 2015

Journal of Elec Materi

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We report on the fabrication and characterization of hybrid-organic memory devices based on gold (Au) nanoparticles that utilize metal-insulator-semiconductor structure. Au nanoparticles were produced by sputtering and inertgas condensation inside an ultrahigh-vacuum compatible system. The nanoparticles were self-assembled on a silicon dioxide (SiO 2 )/silicon (Si) substrate, then coated with a poly(methyl methacrylate) (PMMA) insulating layer. Aluminum (Al) electrodes were deposited by thermal evaporation on the Si substrate and the PMMA layer to create a capacitor. The nanoparticles worked as charge storage elements, while the PMMA is the capacitor insulator. The capacitance-voltage (C-V) characteristics of the fabricated devices showed a clockwise hysteresis with a memory window of 3.4 V, indicative of electron injection from the top Al electrode through the PMMA layer into Au nanoparticles. Charge retention was measured at the stress voltage, demonstrating that the devices retain 94% of the charge stored after 3 h of continuous testing.

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Section: Introductionmentioning

confidence: 99%

Electrical Characteristics of Hybrid-Organic Memory Devices Based on Au Nanoparticles

Nejm

Ayesh

Zeze

et al. 2015

Journal of Elec Materi

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“…were observed with different MIS devices investigated for insulators as a reference device [48], [49], [50].…”

Section: Application Of A-c:h Films In Electronic Memorymentioning

confidence: 99%

Stability of hydrogenated amorphous carbon thin films for application in electronic devices

Alotaibi

Manjunatha

2018

Diamond and Related Materials

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“…Poly methyl methacrylate (PMMA) is one of the promising representatives of polymeric materials and there are numerous proposals for its application as dielectric in organic thin film transistors (OTFTs) (Puigdollers et al,2004;Uemura et al, 2003;Chandar Shekar et al, 2004), sensors (Ponelyte and Palevicius, 2014) as optical lenses in cameras and optical fibers (Nakata et al, 2004;Yang et al, 2004) . Extensive work has been carried out on synthesis, preparation and various properties such as morphology, dielectric, optical and aging behavior of PMMA films (Sakai et al, 2009;Konno et al, 2009;Kim et al, 2009;Mabrook et al, 2009) . In the present work an attempt has been made to prepare PMMA thin films of suitable thickness by a simple dip coating method which could be used in AFM data storage devices.…”

Section: Introductionmentioning

confidence: 99%

Preparation of Mesoscopic Structure Poly Methyl Methacrylate Thin Films for Afm Data Storage Devices.

B¹,

S²,

Sundari³

et al. 2019

krj

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Poly methyl methacrylate (PMMA) thin films were prepared by dip coating method. Benzene was used as a solvent to prepare PMMA thin films for the time periods ranging from 1 min. to 1 h. The thickness of the films deposited was measured by using an electronic thickness measuring instrument (Tesatronic-TTD-20). Fourier Transform Infrared spectrum was used to identify the above said films. X-ray diffraction spectra indicated the predominantly amorphous nature of the films. Surface morphology of the coated films studied by using scanning electron microscope (SEM) indicated the absence of any pits, cracks and pin holes in the surface. Both as grown and annealed films showed smooth and amorphous structures. The closer SEM inspection revealed the presence of self assembled mesoscopic cells. The mesoscopic structure PMMA thin films could be used as an AFM-based data storage which is promising alternative to conventional magnetic data storage because it offers great potential for considerable storage density improvements.

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Memory effects in MIS structures based on silicon and polymethylmethacrylate with nanoparticle charge-storage elements

Cited by 17 publications

References 14 publications

Electrical Characteristics of Hybrid-Organic Memory Devices Based on Au Nanoparticles

Electrical Characteristics of Hybrid-Organic Memory Devices Based on Au Nanoparticles

Stability of hydrogenated amorphous carbon thin films for application in electronic devices

Preparation of Mesoscopic Structure Poly Methyl Methacrylate Thin Films for Afm Data Storage Devices.

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