(2010) 'Self-catalyzed, pure zincblende GaAs nanowires grown on Si (111) Additional information: Use policyThe full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-prot purposes provided that:• a full bibliographic reference is made to the original source • a link is made to the metadata record in DRO • the full-text is not changed in any way The full-text must not be sold in any format or medium without the formal permission of the copyright holders.Please consult the full DRO policy for further details. We report on the Au-free molecular beam epitaxy growth of coherent GaAs nanowires directly on Si͑111͒ substrates. The growth is catalyzed by liquid Ga droplets formed in the openings of a native oxide layer at the initial growth stage. Transmission electron microscopy studies demonstrate that the nanowires are single crystals having the zincblende structure along their length ͑apart from a thin wurtzite region directly below the Ga droplet͒, regardless of their diameter ͑70-80 nm͒ and the growth temperature range ͑560-630°C͒. We attribute the observed phase purity to a much lower surface energy of liquid Ga than that of Au-Ga alloys, which makes triple line nucleation energetically unfavorable. The change in growth catalyst to a liquid metal with a lower energy suppresses the ͑more usual͒ formation of wurtzite nuclei on surface energetic grounds. These results can provide a distinct method for the fabrication of chemically pure and stacking-fault-free zincblende nanowires of III-V compounds on silicon.

Scanning Thermal Microscopy (SThM) uses micromachined thermal sensors integrated in a force sensing cantilever with a nanoscale tip can be highly useful for exploration of thermal management of nanoscale semiconductor devices. As well as mapping of surface and subsurface properties of related materials. Whereas SThM is capable to image externally generated heat with nanoscale resolution, its ability to map and measure thermal conductivity of materials has been mainly limited to polymers or similar materials possessing low thermal conductivity in the range from 0.1 to 1 Wm -1 K -1 , with lateral resolution on the order of 1 µm.In this paper we use linked experimental and theoretical approaches to analyse thermal performance and sensitivity of the micromachined SThM probes in order to expand their applicability to a broader range of nanostructures from polymers to semiconductors and metals. We develop physical models of interlinked thermal and electrical phenomena in these probes and their interaction with the sample on the mesoscopic length scale of few tens of nm and then validate these models using experimental measurements of the real probes, which provided the basis for analysing SThM performance in exploration of nanostructures. Our study then highlights critical features of these probes, namely, the geometrical location of the thermal sensor with respect to the probe apex, thermal conductance of the probe to the support base, heat conduction to the surrounding gas, and the thermal conductivity of tip material adjacent to the apex. It is furthermore allows us to propose a novel design of the SThM probe that incorporates a multiwall carbon nanotube (CNT) or similar high thermal conductivity graphene sheet material with longitudinal dimensions on micrometre length scale positioned near the probe apex that can provide contact areas with the sample on the order of few tens of nm. The new sensor is predicted to provide greatly improved spatial resolution to thermal properties of nanostructures, as well as to expand the sensitivity of the SThM probe to materials with heat conductivity values up to 100-1000 Wm -1 K -1 .

The full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-prot purposes provided that:• a full bibliographic reference is made to the original source • a link is made to the metadata record in DRO • the full-text is not changed in any way The full-text must not be sold in any format or medium without the formal permission of the copyright holders.Please consult the full DRO policy for further details.

Use policyThe full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-pro t purposes provided that:• a full bibliographic reference is made to the original source • a link is made to the metadata record in DRO • the full-text is not changed in any way The full-text must not be sold in any format or medium without the formal permission of the copyright holders.Please consult the full DRO policy for further details.

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