Memory effects in thin film negative resistance structures

Abstract

29Thin film sandwich structures containing a dielectric layer of silicon monoxide approximately 300 to 1000 ~ thick between gold electrodes show a low frequenc~ negative differential resistance, Figures l-a and l-a'. Hickmott has observed a low frequency negative resistance in a wide variety of sandwich structures l • Figure l-a was obtained after applying for a few cycles a triangular waveform having a frequency of 0.05 cps first increasing the voltage to a maximum value and then decreasing it to zero, etc. This mode of operation will be referred to as normal cycling. Note that the peak current for increasing voltage (Figure l-a) is less than that for decreasing voltage (Figure l-a'). This hysteresis effect is found invariably. The sandwich structures studied were fabricated by conventional vacuum coating techniques using high purity gold for the electrode material. The silicon monoxide was evaporated using a baffled tantalum boat at a rate of about 10 ~/sec. The voltage measurement was made by a four-terminal method to minimize the voltage drop in the electrodes. Removing the voltage at various points in the cycle and reapplying it at either the following or successive points when the voltage is zero, causes a change in the current-voltage characteristic that is different from normal cycling. The change in the characteristic is dependent on the point of voltage removal. It can be seen in Figure l-a (normal cycling) that the voltage for maximum current is about 2.4 volts. Removal voltages, with voltage increasing, of less than 1.5 volts have little effect on the characteristic. Reapplication at successive zero pOints would result in the same characteristic. However, a removal voltage of about 2.4 volts (voltage increasing) with reapplication at the next zero results in a higher initial conductance than normal cycling, for example, Figure l-b. More interestingly,perhaps, a removal voltage that is greater than the voltage for maximum current (voltage increasing) gives an initial conductance that is much lower than that for normal cycling.Furthermore, this characteristic has a definite break. It will also be observed that *Supported by the U. S. Office of Naval Research. Based in part on work submitted by Mr. Nielsen in fulfillment of requirements for an advanced degree.

ZnO Based Resistive Random Access Memory Device: A Prospective Multifunctional Next-Generation Memory

“…It was only recognized in the laboratory in 1962 [18] as a nonvolatile resistive switching device with sizeable current density, and negative differential resistance observed in ZrO 2 , SiO, Al 2 O 3 , Ta 2 O 5 , and TiO 2 sandwiches. Similarly, N. M. Bashara, in 1963, illustrates in SiO thin film sandwich between gold (Au) electrodes [19]. In mid-1966, a team argues about the switching action of SiO 2 [20].…”

“…FIGURE19. Characteristic I-V of AZO/ZnO/ITO/PEN RRAM device developed under various RF powers; (a) Device developed with 25 W RF power, the device shows very-low resistivity and unable to produce switching behavior (b) Device developed using 50 W RF power, the device shows an LRS that leads to its failure even with the application of the negative voltage it refused to switch to the HRS (c) Device made with RF power of 100 W (d) Device developed using RF power of 200 W. The 100 W and 200 W RF power produce devices with counter-clockwise bipolar switching characteristics[201].…”

Impact of Top Electrodes (Cu, Ag, and Al) on Resistive Switching behaviour of Cu‐rich Cu2ZnSnS4(CZTS) Ideal Kesterite

“…Resistive memory devices are emerging as the cost‐effective alternative to overcome these challenges in modern technologies and capable of storing large data with better stability [3,4] . The first ever thin‐film based memory was proposed in 1963 by Cheng et al [2,5] . The emerging non‐volatile memories can be used as efficient data storage device to overcome storage problems.…”

“…[1,2] Resistive memory devices are emerging as the cost-effective alternative to overcome these challenges in modern technologies and capable of storing large data with better stability. [3,4] The first ever thin-film based memory was proposed in 1963 by Cheng et al [2,5] The emerging non-volatile memories can be used as efficient data storage device to overcome storage problems. Various memory devices are explored and out of them Phase change (PCRAM) [6] Ferroelectric (Fe-RAM) [7] and resistive (RRAM) [8,9] are widely explored and are in use.…”

Feasibility study of analogue filters based on memristor

“…The concept of memristor was introduced by Leon Chua in 1971, and it is the fourth passive basic electronic device discovered by mankind after resistors, inductors, and capacitors [2]. It has the advantages of fast writing and reading speeds, low power consumption, small size, and good compatibility with CMOS technology, and it has received wide attention in various fields [3].…”