1992
DOI: 10.1109/6.158634
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Memory-fast computer memories

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Cited by 9 publications
(2 citation statements)
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“…The increase in the ratio of memory cycle time to processor cycle time has motivated the development of innovative memory technologies 24,21]. The one approach we examine here is page-mode DRAM access.…”
Section: Block Transfersmentioning
confidence: 99%
“…The increase in the ratio of memory cycle time to processor cycle time has motivated the development of innovative memory technologies 24,21]. The one approach we examine here is page-mode DRAM access.…”
Section: Block Transfersmentioning
confidence: 99%
“…Therefore, SDRAM devices are not truly random access memory and have nonuniform access latencies. There are enhanced DRAM devices, such as CDRAM and EDRAM [9,48], which have an SRAM cache on the DRAM chip to reduce access latency, especially row conflict latency. Unlike the sense amplifiers of JEDEC DRAM, whose contents are lost during a bank precharge, the row data can still be accessed from the SRAM cache when the enhanced DRAM device is being precharged [72].…”
Section: Sdram Access Latencymentioning
confidence: 99%