“…For the Raman spectra of hybrid film, the peak at 1442 cm -1 is related to C=C symmetrical stretching vibration, and the two peaks centered at 1508 cm -1 and 1570 cm -1 are corresponding to the C=C asymmetric stretching vibrations of thiophene rings from PEDOT:PSS [34]. No obvious switch voltage was observed in comparison to previous reports [1,3,4], but the hysteresis-like loop with two resistance states distinctly occurs. The PL spectra of CDs toluene solution are shown in Fig. 2(c).…”
Section: Resultsmentioning
confidence: 54%
“…Electrical bistable memory devices (EBMDs) based on hybrid organic-inorganic nanocomposites have emerged as the excellent candidates for promising application in next-generation memory devices owing to their low fabrication cost and power consumption, good compatibility with semiconductor logic process and acceptance to the flexible substrates [1][2][3][4][5][6][7]. As active layer in the devices, various nanoparticles including metal nanoparticles [8], metal oxide semiconductor [9], and the new-fashioned carbon family [3,[10][11][12][13][14][15][16] had been conceived and employed.…”
Section: Introductionmentioning
confidence: 99%
“…Briscoe et al reported the performance of solid-state nanostructured solar cells based on biomass-derived CDs sensitized ZnO nanorods is distinctly dependent on surface functional groups of the CDs [23]. In the memory mechanism investigations, insulating polymer PMMA is generally considered as barrier layer for preventing the carriers escaping [1,12,16] and PEDOT:PSS is usually taken as memory unit. In the memory mechanism investigations, insulating polymer PMMA is generally considered as barrier layer for preventing the carriers escaping [1,12,16] and PEDOT:PSS is usually taken as memory unit.…”
The ferroelectric-like hysteretic I-V effect was observed in the multilayer film of PMMA/carbon quantum dots (CDs)/PEDOT:PSS using the ITO and Al metals as the electrodes. The multilayer film exhibited two different resistance states and larger hysteresis window under the electric field compared to the film without CDs addition. The influence of additional CDs layer on the short circuit current (I sc ) and open circuit voltage (V oc ) values is related to the interfacial polarization between PMMA and PEDOT:PSS layers. The introduction of CDs layer intensifies interfacial polarization for two dielectric layers, resulting in the larger hysteresiswindow. An interfacial polarization field E´ increases with the external electric field increasing and reaches a maximum value at the threshold voltage V oc of ±15 V. The switch reliability of device is operated over 5×10 3 times in a succession of periodic pulses without any performance degradation.
“…For the Raman spectra of hybrid film, the peak at 1442 cm -1 is related to C=C symmetrical stretching vibration, and the two peaks centered at 1508 cm -1 and 1570 cm -1 are corresponding to the C=C asymmetric stretching vibrations of thiophene rings from PEDOT:PSS [34]. No obvious switch voltage was observed in comparison to previous reports [1,3,4], but the hysteresis-like loop with two resistance states distinctly occurs. The PL spectra of CDs toluene solution are shown in Fig. 2(c).…”
Section: Resultsmentioning
confidence: 54%
“…Electrical bistable memory devices (EBMDs) based on hybrid organic-inorganic nanocomposites have emerged as the excellent candidates for promising application in next-generation memory devices owing to their low fabrication cost and power consumption, good compatibility with semiconductor logic process and acceptance to the flexible substrates [1][2][3][4][5][6][7]. As active layer in the devices, various nanoparticles including metal nanoparticles [8], metal oxide semiconductor [9], and the new-fashioned carbon family [3,[10][11][12][13][14][15][16] had been conceived and employed.…”
Section: Introductionmentioning
confidence: 99%
“…Briscoe et al reported the performance of solid-state nanostructured solar cells based on biomass-derived CDs sensitized ZnO nanorods is distinctly dependent on surface functional groups of the CDs [23]. In the memory mechanism investigations, insulating polymer PMMA is generally considered as barrier layer for preventing the carriers escaping [1,12,16] and PEDOT:PSS is usually taken as memory unit. In the memory mechanism investigations, insulating polymer PMMA is generally considered as barrier layer for preventing the carriers escaping [1,12,16] and PEDOT:PSS is usually taken as memory unit.…”
The ferroelectric-like hysteretic I-V effect was observed in the multilayer film of PMMA/carbon quantum dots (CDs)/PEDOT:PSS using the ITO and Al metals as the electrodes. The multilayer film exhibited two different resistance states and larger hysteresis window under the electric field compared to the film without CDs addition. The influence of additional CDs layer on the short circuit current (I sc ) and open circuit voltage (V oc ) values is related to the interfacial polarization between PMMA and PEDOT:PSS layers. The introduction of CDs layer intensifies interfacial polarization for two dielectric layers, resulting in the larger hysteresiswindow. An interfacial polarization field E´ increases with the external electric field increasing and reaches a maximum value at the threshold voltage V oc of ±15 V. The switch reliability of device is operated over 5×10 3 times in a succession of periodic pulses without any performance degradation.
“…As shown in Fig. 2b , little change of OFF current and a slight degradation of ON current are observed; thus, the ON/OFF current ratio exhibits a slight degradation after operating about 1000 cycles, which indicates a reliable retention performance of the electrically bistable devices in ambient condition [ 17 – 19 ]. Fig.…”
An organic/inorganic bistable device is fabricated by using a simple spin-coating technique, in which the hybrid silver sulfide (Ag2S) poly(N-vinylcarbazole) (PVK) nanocomposite film is sandwiched between two electrodes. An obvious electrical hysteresis is observed in the current-voltage (I-V) curve of the device measured in the presence of different oxygen concentrations, and the magnitude of the electrical hysteresis is decreased with a decrease of the oxygen concentrations. The electrical bistability of the device exhibits a strong dependence on the oxygen concentrations, and the current variation of the OFF state is higher than that of the ON state with the gas atmosphere changing from N2 to air. Different theoretical models have been employed to describe the carrier transport mechanisms of the device in the OFF and ON states measured in different gas atmospheres on the basis of the experimental I-V results, and the carrier transport of the device in the ON state measured in air is very different from that measured in N2 and low O2 concentrations due to the participation of oxygen vacancies in the trapping and de-trapping processes of electrons into and out of the Ag2S/PVK heterointerface.
“…Organic memory devices play an important part in plastic and flexible electronic applications [19], which lead to extensive research in this field. Organic memory devices based on charge storage in bistable switching [20][21][22], metal-insulator-semiconductor structures (MIS) [23][24][25][26], and organic thin film memory transistors (OTFMTs) [27][28][29] have been reported in recent years. The main structure to achieve fast and high capacity memory is the floating gate-based memory devices; where a thin film of a floating gate serves as the charge storage element in a transistor or MIS structure [29,30].…”
The electrical behaviour of organic memory structures based on gold nanoparticles (AuNPs) and poly 4-vinylphenol as the gate dielectric are reported in this work. Metal-insulator-semiconductor (MIS) and thin film transistor structures were used to fabricate the control and memory devices. The drain and source electrodes were fabricated by evaporating 50 nm gold, and the gate electrode was made from 50 nm-evaporated aluminium on a clean glass substrate. Thin films of AuNps embedded within the insulating layer were used as the floating gate. All memory devices exhibited clear hysteresis in their electrical characteristics [capacitance-voltage (C-V) for MIS structures as well as output and transfer characteristics for transistors]. Both structures were shown to produce reliable and large memory windows by virtue of high capacity. The hysteresis in the output and transfer characteristics and shifts in the threshold voltage of the transfer characteristics as well as flat-band voltage shift in the MIS structures were attributed to the charging and discharging of the AuNPs floating gate. Memory window of 38 V was achieved by scanning the applied voltage of the MIS structure between 40 and − 40 V. Similarly, a memory window of 27 V was achieved for the TFT-based memory structure. Under an appropriate gate bias of 1 s pulses, the floating gate is charged and discharged, resulting in significant threshold voltage shifts. Pulses of as low as 5 V resulted in a clear write and erase states.
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