Memory Technology: The Core to Enable Future Computing Systems

DeBoer, S.

doi:10.1109/vlsit.2018.8510707

Cited by 5 publications

(1 citation statement)

References 4 publications

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“…To achieve high-density ferroelectric memories, ferroelectric HfO 2 (FE-HfO 2 ) has been paid attention because of its high CMOS compatibility, high scalability, and high coercive electrical field. [1][2][3] However, the right endurance of FE-HfO 2 -based capacitors is still limited mainly by dielectric breakdown (DB). 4,5) Time-dependent dielectric breakdown (TDDB) measurements are performed to evaluate the lifetime of FE-HfO 2 memories.…”

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confidence: 99%

Dielectric breakdown behavior of ferroelectric HfO₂ capacitors by constant voltage stress studied by in situ laser-based photoemission electron microscopy

Itoya,

Fujiwara,

Bareille

et al. 2024

Jpn. J. Appl. Phys.

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The in-situ laser-based photoemission electron microscopy (laser-PEEM) observation with time dependent dielectric breakdown (TDDB) measurements of TiN/Hf0.5Zr0.5O2(HZO)/TiN ferroelectric capacitors were performed to reveal the dielectric breakdown (DB) mechanism. We succeeded in visualizing the hard DB spots through the top electrode. We found that capacitors with short- and long-lifetime distribution were broken down near and far from the edge of the capacitors, respectively. This indicates that DB is either topography-dependent or film quality-dependent. This work demonstrates the effective method of detecting DB in a non-destructive manner to provide an insight for achieving higher endurance of HfO2-based ferroelectric capacitors.

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confidence: 99%

Dielectric breakdown behavior of ferroelectric HfO₂ capacitors by constant voltage stress studied by in situ laser-based photoemission electron microscopy

Itoya,

Fujiwara,

Bareille

et al. 2024

Jpn. J. Appl. Phys.

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A Novel Resistive Switching Identification Method through Relaxation Characteristics for Sneak-path-constrained Selectorless RRAM application

Chen

Lin

et al. 2019

Sci Rep

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Resistive random access memory (RRAM) is a leading candidate in the race towards emerging nonvolatile memory technologies. The sneak path current (SPC) problem is one of the main difficulties in crossbar memory configurations. RRAM devices with desirable properties such as a selectorless, 1R-only architecture with self-rectifying behavior are potential SPC solutions. In this work, the intrinsic nonlinear (NL) characteristics and relaxation characteristics of bilayer high-k/low-k stacked RRAMs are presented. The intrinsic nonlinearity reliability of bilayer selectorless 1R-only RRAM without additional switches has been studied for their ability to effectively suppress SPC in RRAM arrays. The relaxation properties with resistive switching identification method by utilizing the activation energy (Ea) extraction methodology is demonstrated, which provides insights and design guidance for non-uniform bilayer selectorless 1R-only RRAM array applications.

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Analog Synaptic Behaviors in Carbon-Based Self-Selective RRAM for In-Memory Supervised Learning

Chen

Eshraghian

Shipley

et al. 2021

2021 IEEE 71st Electronic Components and Technology Conference (ECTC)

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Memory Technology: The Core to Enable Future Computing Systems

Cited by 5 publications

References 4 publications

Dielectric breakdown behavior of ferroelectric HfO₂ capacitors by constant voltage stress studied by in situ laser-based photoemission electron microscopy

Dielectric breakdown behavior of ferroelectric HfO₂ capacitors by constant voltage stress studied by in situ laser-based photoemission electron microscopy

A Novel Resistive Switching Identification Method through Relaxation Characteristics for Sneak-path-constrained Selectorless RRAM application

Analog Synaptic Behaviors in Carbon-Based Self-Selective RRAM for In-Memory Supervised Learning

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Memory Technology: The Core to Enable Future Computing Systems

Cited by 5 publications

References 4 publications

Dielectric breakdown behavior of ferroelectric HfO2 capacitors by constant voltage stress studied by in situ laser-based photoemission electron microscopy

Dielectric breakdown behavior of ferroelectric HfO2 capacitors by constant voltage stress studied by in situ laser-based photoemission electron microscopy

A Novel Resistive Switching Identification Method through Relaxation Characteristics for Sneak-path-constrained Selectorless RRAM application

Analog Synaptic Behaviors in Carbon-Based Self-Selective RRAM for In-Memory Supervised Learning

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Product

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Dielectric breakdown behavior of ferroelectric HfO₂ capacitors by constant voltage stress studied by in situ laser-based photoemission electron microscopy

Dielectric breakdown behavior of ferroelectric HfO₂ capacitors by constant voltage stress studied by in situ laser-based photoemission electron microscopy