2015
DOI: 10.1063/1.4922624
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Memristive behavior in a junctionless flash memory cell

Abstract: We report charge storage based memristive operation of a junctionless thin film flash memory cell when it is operated as a two terminal device by grounding the gate. Unlike memristors based on nanoionics, the presented device mode, which we refer to as the flashristor mode, potentially allows greater control over the memristive properties, allowing rational design. The mode is demonstrated using a depletion type n-channel ZnO transistor grown by atomic layer deposition (ALD), with HfO2 as the tunnel… Show more

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Cited by 19 publications
(11 citation statements)
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“…2b , the output characteristics [ I D versus drain voltage ( V D )] with clear linear-to-saturation transition confirm the proper channel pinch-off and minimal contact resistance 27 28 . Additionally, the dual-sweep output curves of a SFG-OFET show the characteristic memristive behaviour that originates from the charge trapping and release taking place within the timescale of curve sweeps 29 . We obtained a near-100% yield of working devices 30 , benefiting from our geometrically flat, and spatially uniform 2-D memory element ( Fig.…”
mentioning
confidence: 99%
“…2b , the output characteristics [ I D versus drain voltage ( V D )] with clear linear-to-saturation transition confirm the proper channel pinch-off and minimal contact resistance 27 28 . Additionally, the dual-sweep output curves of a SFG-OFET show the characteristic memristive behaviour that originates from the charge trapping and release taking place within the timescale of curve sweeps 29 . We obtained a near-100% yield of working devices 30 , benefiting from our geometrically flat, and spatially uniform 2-D memory element ( Fig.…”
mentioning
confidence: 99%
“…where V DS is the source-drain voltage, V GS is the gate-source voltage, µ eff is the effective channel mobility, V TH is the threshold voltage, C ox is the areal capacitance of the gate stack, w and L are the width and length of the channel, and is the Early parameter. The more details about this equation were given in previous study [21].…”
Section: Resultsmentioning
confidence: 99%
“…Memristor has low power and nonvolatile operation, variety of physical mechanisms and potentially high density, placing advanced components of future computing systems [21]. Si3N4 is commonly used memory contacts for memristive characterizations.…”
Section: Resultsmentioning
confidence: 99%