Memristive Behavior in Electrohydrodynamic Atomized Layers of Poly[2-methoxy-5-(2'-ethylhexyloxy)–(p-phenylenevinylene)] for Next Generation Printed Electronics

Abstract

Poly[2-methoxy-5-(2'-ethylhexyloxy)–(p-phenylenevinylene)] (MEH:PPV) based organic memristor (memory resistor) has been fabricated on the indium–tin oxide (ITO) coated poly(ethylene terepthalate) (PET) substrate by the electrohydrodynamic atomization (EHDA) technique. Thin jet containing MEH:PPV polymer was generated through a capillary under electrical stresses. The jet was broken into small droplets by adjusting the distance from nozzle to substrate and collected over the substrate under normal room conditions, consequently a high quality layer of MEH:PPV was achieved with an average thickness of 168 nm. The layer was morphologically characterized by a field emission scanning electron microscope (FESEM) analysis. X-ray photoelectron spectroscope (XPS) analysis was also carried out to confirm the chemistry of the deposited material. Electrically, ITO/MEH:PPV/Ag fabricated memristor was found to be switchable between high state and low state between ±4 V. The research work provides the memristive behavior in electrohydrodynamic atomized layers of MEH:PPV to be used for the next generation printed electronics application.

Reconfigurable Memristive Device Technologies

“…There are numerous polymers that have been investigated for memristive devices, a list of which is rapidly growing, including polyethylene dioxythiophene:polystyrene sulfonic acid (PEDOT:PSS) [204], polyvinyl alcohol (PVA) [205], Co(III) polymer with an azo-aromatic backbone [206], p-toluenesulfonic acid (TsOH)-doped poly(Schiff base) [207]], poly[2-methoxy-5-(2'-ethylhexyloxy)-(p-phenylenevinylene)] (MEH:PPV) [208], polyaniline with Li+-doped polyetheneoxide (PANI:PEO) [209], [210], dithienopyrrole and benzodithiophene polymers [70], to name only a few (see [199] for a review of many of the polymer-based memristors to date). Techniques for deposition of these polymeric materials are solution-based processes, such as spin coating, dip coating, spray coating, ink-jet printing, roller coating, and blade coating, rather than vacuum deposition methods, due to the likelihood of material decomposition/ degradation during deposition.…”

Parylene Based Memristive Devices with Multilevel Resistive Switching for Neuromorphic Applications

“…In the last case an electrochemically active metal, for example Ag, is used as one of the electrodes of the memristive structure of metal-insulator-metal (MIM) type. Under applied positive voltage, Ag + cations can migrate to the cathode, where they are reduced and form metal bridges [1,5,[23][24][25][26][27][28][29][30]. This mechanism can also be realized with Cu [30][31][32] and Al [33][34][35] active electrodes.…”