Memristive behavior of TiOx obtained via Pb(II)-assisted anodic oxidation process

Gökcen, Dinçer; Şentürk, Orhun; Karaca, Erhan; Pekmez, Kadi̇r

doi:10.1007/s10854-019-00867-3

Cited by 8 publications

(10 citation statements)

References 45 publications

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“…In TiO 2 -based memristors, 2 conversion between electrically insulating TiO 2 and conductive Ti n O 2n−1 (n = 4, 5) provides a mechanistic basis for its resistive switching. [3][4][5][6][7] Ti 4 O 7 and Ti 5 O 9 are also promising alternatives to carbon-based materials in aqueous electrochemical systems, [8][9][10][11] having electrical conductivities comparable to graphite, 12 chemical inertness in aggressive etchants, 8,13 and high overpotentials for the oxygen evolution reaction in water. 14 However, passivation forming TiO 2 occurs in sufficiently oxidizing conditions found in lead-acid batteries, 15 regenerative fuel cells, 16 and devices electrochemically incinerating aqueous pollutants.…”

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confidence: 99%

The Thermal-Oxidation Behavior of Pristine and Doped Magnéli Phase Titanium Oxides

English

Wilkinson

2021

ECS J. Solid State Sci. Technol.

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Magnéli phase titanium oxides (Ti n O2n−1, 4 ≤ n ≤ 10) are important materials for solid state and electrochemical technologies such as memristors, batteries, fuel cells, and electrochemical devices for water treatment. Developing an understanding of transitions between Ti n O2n−1 and its product of oxidation, titanium(IV) oxide (TiO2), as well as strategies such as doping to modulate the conditions for such changes will enable the development of more effective devices. To elucidate a mechanism for their thermal oxidation and investigate the influence of doping, the thermal-oxidation behavior in air of Ti4O7 doped with vanadium, chromium, and iron were investigated by thermogravimetric analysis (TGA). These powders prepared by high-temperature H2 reduction of dopant-containing TiO2 were characterized by scanning electron microscopy (SEM), gas adsorption analysis, X-ray fluorescence (XRF), energy-dispersive X-ray (EDX) spectroscopy, X-ray photoelectron spectroscopy (XPS), and powder X-ray diffraction (PXRD). V- and Fe-‍doping improved the thermal stability of Ti4O7 as evidenced by higher onset temperatures in their thermograms. Three-dimensional diffusion reaction models adequately describe the solid-state kinetics of thermal oxidation of Ti4O7 in air as demonstrated by linear model-fitting. Doping shows a mixed influence on the kinetics for thermal oxidation in air reducing both the Arrhenius pre-exponential factor and the activation energy.

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confidence: 99%

The Thermal-Oxidation Behavior of Pristine and Doped Magnéli Phase Titanium Oxides

English

Wilkinson

2021

ECS J. Solid State Sci. Technol.

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“…Electrochemical coating methods provide up-and-coming solutions to produce titanium oxide thin films, especially in nonstoichiometric phases. 10,11 Due to their high throughput and low-cost, electrochemical techniques are of great interest in the semiconductor industry, e.g. Cu damascene plating.…”

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confidence: 99%

“…12,13 Even though anodic oxidation of Ti has the potential to be utilized in memristor fabrication at high volumes, only a few studies are available in the literature covering this concept. 10,[14][15][16] Anodization is a low-cost and reliable technique as long as conditions such as ingredients of the solution, applied voltage, time, and process flow are provided.…”

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confidence: 99%

Active Memristive Layer Deposition via Mn(II)-Assisted Anodic Oxidation of Titanium

Gul

Gökcen

2020

ECS J. Solid State Sci. Technol.

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This study focuses on the development of a feasible, low-cost, and reliable electrodeposition technique for metal (Ti and Mn) oxide-based active memristive layers on Ti. The developed deposition process is based on Mn(CH3SO3)2-assisted anodic oxidation of Ti via cyclic voltammetry in 100 mM Methanesulfonic acid (CH3SO3H) aqueous solution. According to our experimental observations, the use of Mn2+ as an additive can promote the anodic oxidation of Ti and enables the deposition of thicker oxide layers as compared to the deposits obtained without additives. Various concentrations of Mn2+ are elaborated in this study, and the resulting thicknesses are evaluated using reflectometry, cross-sectional scanning electron microscopy (SEM), and depth-profiling X-ray photoelectron spectroscopy (XPS). Accordingly, 10 mM Mn2+ in the solution yields the deposition of manganese oxide (MnOx), whereas the solution with 100 mM Mn2+ promotes the deposition of thicker titanium oxide (TiOx), as compared to the solution without Mn2+. Surface morphologies of the structures are identified using both Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM). Memristive characteristics of the resulting thin films are examined using a sandwich configuration formed by Ag/Metal-Oxide/Ti/Au. Current-Voltage measurements show characteristic memristor bow-tie hysteresis for Ag/TiOx/Ti/Au and Schottky barrier related rectifying properties in specific voltage ranges for Ag/MnOx/Ti/Au structures.

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“…Memristor research remained in theory level until the first practical work done by Williams et al in 2008 [2]. Since then, in the search for new generation electronic systems, memristors have drawn the attention of the industry.An active memristive layer, mostly metal oxide, sandwiched by two metal electrodes forms a memristor [2,3]. At this point, the active material is deterministic to obtain the bow-tie I-V hysteresis from the electrical measurements.…”

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confidence: 99%

“…An active memristive layer, mostly metal oxide, sandwiched by two metal electrodes forms a memristor [2,3]. At this point, the active material is deterministic to obtain the bow-tie I-V hysteresis from the electrical measurements.…”

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confidence: 99%

Memristor Based Multi-State Shift Register Architecture

Gökcen

2019

Hittite J. Sci. Eng.

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D evelopments in nanofabrication and material technologies have a significant impact on the speed, power consumption, cost and stability of electronic systems. In recent years, memristors have been one of the most important junction points where nanomaterials and electronics met. In the 1970s, Chua put forward the idea that there must be a circuit element defining the relationship between flux and charge [1]. Memristor research remained in theory level until the first practical work done by Williams et al. in 2008 [2]. Since then, in the search for new generation electronic systems, memristors have drawn the attention of the industry.An active memristive layer, mostly metal oxide, sandwiched by two metal electrodes forms a memristor [2,3]. At this point, the active material is deterministic to obtain the bow-tie I-V hysteresis from the electrical measurements. Since the fabrication of the first memristor by Williams et al., TiO 2 represents one of the most worked out active materials in the literature [4]. The oxygen Article History:

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Memristive behavior of TiOx obtained via Pb(II)-assisted anodic oxidation process

Cited by 8 publications

References 45 publications

The Thermal-Oxidation Behavior of Pristine and Doped Magnéli Phase Titanium Oxides

The Thermal-Oxidation Behavior of Pristine and Doped Magnéli Phase Titanium Oxides

Active Memristive Layer Deposition via Mn(II)-Assisted Anodic Oxidation of Titanium

Memristor Based Multi-State Shift Register Architecture

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