Memristive devices fabricated with silicon nanowire schottky barrier transistors

Abstract

Abstract-This paper reports on the memory and memristive effects of Schottky barrier field effect transistors (SBFET) with gate-all-around (GAA) configuration and Si nanowire (SiNW) channel. Similar behavior has also been investigated for SBFETs with poly-Si nanowire (poly-SiNW) channel in back-gate configuration. The memristive devices presented here have the potential of a very high integration density, and they are suitable for hybrid CMOS co-fabrication with a CMOS-compatible process. We show that 2 different regimes are possible, making these devices suitable either for volatile ambipolar memory or resistive random access memory (RRAM) applications. In addition, frequency-and amplitude-dependence of the memristive behavior are reported.

New Insight on Bio-sensing by Nano-fabricated Memristors

“…Before functionalization with the AB layer, I ds − V ds curves taken for forward and backward sweep do show a typical memristive behavior (see Fig. 2a), where the current minima always occur for V ds = 0 V, consistently with previously reported measurements [8] on non-functionalized devices. Conversely, functionalized silicon nanowires show different positions of the current minima for backward or forward regimes.…”

“…The fabrication method utilizes some of the steps that were previously reported [8] for memristive Schottkybarrier silicon nanowire field-effect transistors. The process starts from low resistivity silicon-on-insulator substrates, with 1.5 μm device layer and 3 μm SiO 2 insulating layer.…”

TEAM: ThrEshold Adaptive Memristor Model

“…New devices exhibiting memristive behavior have been announced [4], [5], and existing devices such as spin-transfer torque magnetoresistive random access memory (STT-MRAM) have been redescribed in terms of memristive systems [6].…”

“…Assume the relationship between the voltage and current of a memristor is similar to (4). The memristance changes linearly in x, and (2) becomes ( )…”

Memristive-biosensors: A new detection method by using nanofabricated memristors

“…In all these structures, the memory effect depends on charge carriers rearrangement at the nanoscale as due to external perturbations [6]. These memory-effect devices have been fabricated by using different materials, including amorphous silicon [7], crystalline silicon [8], platinum/TiO 2 [9], platinum/organic-films [5], aniline-derivatized conductive-polymers [10], and graphene embedded in insulating polymers [11]. These devices have been proposed for different applications including digital [9] and analog [12] memories, logic [13] and neuromorphic [14][15][16] circuits.…”