Memristor based on a layered FePS₃ 2D material with dual modes of resistive switching

Abstract

In this report, we present a vertical memristor based on a layered FePS3 two-dimensional material with the structure Ag/FePS3/Au, where FePS3 is a single-crystalline layer with a thickness of ∼151 nm. By operating a device with a pulse voltage of 0.1 V dual modes of resistive switching with both analog and digital features are implemented in a single device. One mode lies between the OFF and ON states and another lies in the ON state. The device shows nonvolatility. Short-term plasticity and long-term potentiation are observed. Therefore, the FePS3 memristor is suitable for application in flexible and complex neuromorphic systems.

Resistive Switching Crossbar Arrays Based on Layered Materials

“…Refs. [65,90,[96][97][98][99][100][101][102][103] used fabrication processes not scalable to the wafer-level (i.e., micromechanical cleavage [MC] of bulk crystals [104,105] ), and/or used device structures that are too large (i.e., >10 3 µm 2 [71] ), therefore not meeting the integration density requirements (256 nm 2 per device). [5,6] Several reviews summarized the literature on LMs-based RS devices.…”

“…Refs. [97,[266][267][268] employed the word "programming" to refer to the operation they carried out, but all they did is store data. This may be misleading, because "programming" denotes data processing and/or computation, [269] not carried out in refs.…”

“…This may be misleading, because "programming" denotes data processing and/or computation, [269] not carried out in refs. [97,[266][267][268].…”

“…We emphasize that, for any device parameter, claiming the measurement of many (>10 7 ) cycles and showing data corresponding to one/few cycle/s per decade, as in refs. [38,93,94,97,144], is not acceptable. [5] RS must be characterized in every cycle, [61,88,111,216] otherwise one cannot ensure that the device has switched.…”

High‐Performance Memristors Based on Few‐Layer Manganese Phosphorus Trisulfide for Neuromorphic Computing

“…However, imperfect device characteristics such as limited cycling endurance and poor device uniformity still remain, despite extensive research attention given to MPX 3 -based memristors in recent years. [23][24][25] In-depth understanding of the intrinsic resistive switching mechanism is essential for performance optimization. However, the underlying mechanism is still unclear, especially because of the lack of microscopic experiments that can provide direct observation of the resulting physical and chemical changes associated with applied voltage in the MPX 3 layer.…”