2012 Seventh International Conference on Computer Engineering &Amp; Systems (ICCES) 2012
DOI: 10.1109/icces.2012.6408491
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Memristor-based relaxation oscillators using digital gates

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Cited by 11 publications
(12 citation statements)
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“…The valid range of V ref is [−0.3333 V , 0.4605 V ] and circuit parameter equals {V n , V p = −0.75 V ,0.5 V } as shown in Figure B. A similar architecture to this case was presented in Khatib et al where a NAND gate was employed instead of AND gate that is why different expressions are derived here since; the procedure is different.…”
Section: Generalized Two Memristor‐based Voltage‐controlled Oscillatormentioning
confidence: 98%
See 2 more Smart Citations
“…The valid range of V ref is [−0.3333 V , 0.4605 V ] and circuit parameter equals {V n , V p = −0.75 V ,0.5 V } as shown in Figure B. A similar architecture to this case was presented in Khatib et al where a NAND gate was employed instead of AND gate that is why different expressions are derived here since; the procedure is different.…”
Section: Generalized Two Memristor‐based Voltage‐controlled Oscillatormentioning
confidence: 98%
“…Therefore, the memristor is considered as a resistance‐storing element. The memristor replaced a reactive element such as a capacitor or an inductor in the relaxation oscillators . The circuit introduced in Zidan et al consists of one memristor and one resistor (M‐R), and another circuit introduced in Zidan et al where the memristor is exchanged with the resistor (R‐M).…”
Section: Introductionmentioning
confidence: 99%
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“…The two comparators are used to make sure that the memristor resistance always varies between two limits to achieve the oscillation function at the output of the NAND gate [14]. The two memristors are connected instead of the relaxation RC circuit to emulate the behavior of the charging and the discharging of the capacitor as shown in Fig.…”
Section: Symmetric Memristive Two-gate Oscillatormentioning
confidence: 99%
“…The positive configuration of this type, shown in Figure 1d, was recently presented by the authors in [48]. Slight variations to the original circuit presented in [48] provide higher frequency of operation and a wider range of allowable resistances [49,50] and could be easily applied to the family of circuits presented. The effect of the linear and non linear models on the oscillation frequency and condition of oscillation on the original circuit presented in [48] have been presented in [51].…”
Section: Mrlo Type 'C': Single Grounded Memristor (Kmentioning
confidence: 99%