2014
DOI: 10.1002/pssc.201400125
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Memristors under the influence of noise and temperature

Abstract: We study the performance of a manganite sample meant for memresistive applications. In particular, we experimentally address the interplay between temperature and electrical noise the sample is subject to. Results reveal an optimum noise amplitude that maximizes the contrast between low‐ and high‐resistive states, and a decaying contrast with increasing temperature. We introduce a numerical model accounting for the observed experimental behavior. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Cited by 5 publications
(7 citation statements)
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“…This equation shows that the resistivity decreases with increasing temperature, which agrees with the reported property in [42]. Also, it can be applied to the other materials such as tantalum [43] and manganite [44]. For simpler computation, the resistivity can be approximated to the second order polynomial given in ( 5) where, C 0 , C 1 , and C 2 are material dependent constants.…”
Section: A Model Analysissupporting
confidence: 73%
“…This equation shows that the resistivity decreases with increasing temperature, which agrees with the reported property in [42]. Also, it can be applied to the other materials such as tantalum [43] and manganite [44]. For simpler computation, the resistivity can be approximated to the second order polynomial given in ( 5) where, C 0 , C 1 , and C 2 are material dependent constants.…”
Section: A Model Analysissupporting
confidence: 73%
“…Finally, it is important to point out that there exists evidence in the literature of external noise enhancing the resistive contrast [3,4,5]. It remains a matter of future work to explore whether it is possible to account for such an observation within the framework put forth in this paper.…”
Section: Discussionmentioning
confidence: 88%
“…3, the value of x at the end of the previous +1 pulse), the pulse duration τ b is not long enough to allow for the convergence to stationarity and higher noise intensities are needed to erase the memory of the initial condition. Moreover, when the noise intensity is low, the value of x(2τ b ) can be approximated by the deterministic solution in equations (3)- (5).…”
Section: Internal Noisementioning
confidence: 99%
“…The relevant supercurrent differences ( ) are then calculated between the averaged diffraction patterns. Recently, the effects of the noise on the performance of several memory devices has been investigated 15 18 39 40 41 42 43 44 45 .…”
Section: Resultsmentioning
confidence: 99%