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We study the effect of external noise on resistive switching. Experimental results on a manganite sample are presented showing that there is an optimal noise amplitude that maximizes the contrast between high and low resistive states. By means of numerical simulations, we study the causes underlying the observed behavior. We find that experimental results can be related to general characteristics of the equations governing the system dynamics.Comment: 4 pages, 5 figure

In this paper we study the role of noise in the context of resistive switching phenomena by means of experiments and numerical simulations. Experiments are conducted on a manganite sample. We show that the addition of external Gaussian noise to a small amplitude driving signal yields a contrast ratio between low- and high-resistance states, comparable to that obtained by the application of a large amplitude noiseless signal. Furthermore, excellent agreement between numerical simulation and measurement allows us to study resistive switching under varying input conditions and, thus, properly characterize the beneficial role of noise. We believe these results might be of relevance in the area of memory devices where the large scale of electronic integration renders the presence of noise unavoidable.