On the beneficial role of noise in resistive switching

Patterson, G. A.; Fierens, Pablo Ignacio; Grosz, D. F.

doi:10.1063/1.4819018

Cited by 34 publications

(23 citation statements)

References 18 publications

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“…[8,9], we conducted a large number of simulations to understand the observed behavior. The model employed is presented in the next section.…”

Section: Resultsmentioning

confidence: 99%

“…[8,9]. It was shown that any symmetric perturbation in the input current i(t) will increase the mean velocity from Eq.…”

Section: R B I(t) R(xi)mentioning

confidence: 96%

“…[10] which qualitatively accounts for the observed behavior as shown in Refs. [8,9]. Finally, in Section 5 conclusions are discussed.…”

mentioning

confidence: 97%

“…They found that, under certain conditions, the contrast between lowand high-resistive states is enhanced when some amount of internal noise, inherent to the sample, is present in the system. Recently, experiments on manganite samples have shown that external noise has a beneficial effect during the pulsing protocol [8,9]. As such, the scope of this work is to further study the effect of electrical noise and temperature on a memristive system by means of experimental observation and numerical analysis.…”

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confidence: 99%

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Memristors under the influence of noise and temperature

Patterson

Jimka

Fierens

et al. 2014

Phys. Status Solidi C

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We study the performance of a manganite sample meant for memresistive applications. In particular, we experimentally address the interplay between temperature and electrical noise the sample is subject to. Results reveal an optimum noise amplitude that maximizes the contrast between low‐ and high‐resistive states, and a decaying contrast with increasing temperature. We introduce a numerical model accounting for the observed experimental behavior. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…[8,9], we conducted a large number of simulations to understand the observed behavior. The model employed is presented in the next section.…”

Section: Resultsmentioning

confidence: 99%

“…[8,9]. It was shown that any symmetric perturbation in the input current i(t) will increase the mean velocity from Eq.…”

Section: R B I(t) R(xi)mentioning

confidence: 96%

“…[10] which qualitatively accounts for the observed behavior as shown in Refs. [8,9]. Finally, in Section 5 conclusions are discussed.…”

mentioning

confidence: 97%

mentioning

confidence: 99%

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Memristors under the influence of noise and temperature

Patterson

Jimka

Fierens

et al. 2014

Phys. Status Solidi C

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“…Several reports [47,48] have already shown the importance of noise in the response of memristive devices to the external driving field. However, the approach used is limited to the case of a bistable system and must be extended to the multi-stable energetic profile describing the real situation more correctly.…”

Section: Noise-induced Phenomenamentioning

confidence: 99%

Field‐ and irradiation‐induced phenomena in memristive nanomaterials

Mikhaylov

Gryaznov

Belov

et al. 2016

Phys. Status Solidi C

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The breakthrough in electronics and information technology is anticipated by the development of emerging memory and logic devices, artificial neural networks and brain-inspired systems on the basis of memristive nano-materials represented, in a particular case, by a simple 'metal-insulator-metal' (MIM) thin-film structure. The present article is focused on the comparative analysis of MIM devices based on oxides with dominating ionic (ZrOx, HfOx) and covalent (SiOx, GeOx) bonding of various composition and geometry deposited by magnetron sputtering. The studied memristive devices demonstrate reproducible change in their resistance (resistive switching - RS) originated from the formation and rupture of conductive pathways (filaments) in oxide films due to the electric-field-driven migration of oxygen vacancies and/or mobile oxygen ions. It is shown that, for both ionic and covalent oxides under study, the RS behaviour depends only weakly on the oxide film composition and thickness, device geometry (down to a device size of about 20x20 mu m(2)). The devices under study are found to be tolerant to ion irradiation that reproduces the effect of extreme fluences of high-energy protons and fast neutrons. This common behaviour of RS is explained by the localized nature of the redox processes in a nanoscale switching oxide volume. Adaptive (synaptic) change of resistive states of memristive devices is demonstrated under the action of single or repeated electrical pulses, as well as in a simple model of coupled (synchronized) neuron-like generators. It is concluded that the noise-induced phenomena cannot be neglected in the consideration of a memristive device as a nonlinear system. The dynamic response of a memristive device to periodic signals of complex waveform can be predicted and tailored from the viewpoint of stochastic resonance concept. (C) 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinhei

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Neuromorphic Systems

Erokhin

2021

Fundamentals of Organic Neuromorphic Systems

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On the beneficial role of noise in resistive switching

Cited by 34 publications

References 18 publications

Memristors under the influence of noise and temperature

Memristors under the influence of noise and temperature

Field‐ and irradiation‐induced phenomena in memristive nanomaterials

Neuromorphic Systems

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