2011 IEEE 24th International Conference on Micro Electro Mechanical Systems 2011
DOI: 10.1109/memsys.2011.5734377
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MEMS-based thick film PZT vibrational energy harvester

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Cited by 51 publications
(26 citation statements)
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“…Different piezoelectric converters have been investigated based on different architectures [34][35][36][37][38][39][40][41][42][43][44][45]. In most cases, the converter employs a cantilever beam structure with different geometries for the piezoelectric layer such as rectangular and triangular.…”
Section: Overview Of Vibration Energy Convertersmentioning
confidence: 99%
See 1 more Smart Citation
“…Different piezoelectric converters have been investigated based on different architectures [34][35][36][37][38][39][40][41][42][43][44][45]. In most cases, the converter employs a cantilever beam structure with different geometries for the piezoelectric layer such as rectangular and triangular.…”
Section: Overview Of Vibration Energy Convertersmentioning
confidence: 99%
“…They reach maximally only some micro watts at low frequencies. [26][27][28][29][30][31][32][33], piezoelectric [34][35][36][37][38][39][40][41][42][43][44][45] and magnetoelectric [46][47][48][49][50][51][52][53] vibration transducers prototypes.…”
Section: Overview Of Vibration Energy Convertersmentioning
confidence: 99%
“…For integration of piezoelectric materials on silicon, various thin and thick film deposition techniques have been developed to date, including sputtered AlN [11][12], screen-printed PZT [13], sol-gel PZT [14][15][16], aerosol PZT [17], and others. However, in addition to their individual fabrication challenges, these deposited films are generally limited in their maximum allowable film thicknesses (2-5 µm), and show poor piezoelectricity compared to commercially available bulk ceramics.…”
Section: Piezoelectric Resonant Energy Harvestermentioning
confidence: 99%
“…In addition, a hydrothermal method (24) and a screen printing process (25) have been developed for thick films over 5 μm in thickness. Lei et al (26) combined the thick-film screen printing technique and a micromachining process using a silicon on insulator (SOI) wafer to fabricate a microcantilever with a unimorph PZT thick film. The fabricated harvester device produces 14.0 μW with an optimal resistive load of 100 kΩ from 1g input acceleration at its resonant frequency of 235 Hz.…”
Section: Introductionmentioning
confidence: 99%