MEMS Fabricated Chip for an Implantable Drug Delivery Device

Abstract

We present a silicon-based implantable drug delivery system (IDDS) for the administration of compounds in vivo. The implanted device contains the drug-filled silicon microchip, control circuitry, telemetry capability, and a battery. At the heart of the IDDS is the drug-containing microchip, a MEMS (MicroElectroMechanical Systems)-based device. A process was developed for the fabrication of the silicon chip. MicroCHIPS' drug release technology has been successfully demonstrated in vitro and in vivo using the therapeutic peptide leuprolide as a model compound.

Raney-platinum thin film electrodes for the catalysis of glucose in abiotically catalyzed micro-glucose fuel cells

“…Implantable electronic devices have successfully been used in biomedical applications since the invention of the artificial pacemaker more than five decades ago [1]. The concept of miniaturised electronic systems have since been promoted to various clinical activities [2] such as, implantable neuroprosthetic devices [3], immuno-isolation barriers [4], drug delivery [5], microinjection [6], pH detection [7] and blood pressure monitoring systems [8], [9]. Although batteries have been considered as the first choice as a driven power supply, they suffer from the size constraints of the implant combined with a relatively low energy storage capacity.…”

Analysis and Experiment of MEMS Based Microdroplet Ejector by a Piezoelectric Stack Actuator in Microfluidic Application

“…• Grow thermal oxide (0.3 um) -preferably buy wafers with thermal oxide pre-grown (Loverich et al, 2006) • HMDS wafers, deposit thin resist on both sides, pre-bake, photo M1 (alignment marks) on topside, develop, post-bake • BOE for 4 min, spin-dry wafers • Alignment mark etch topside using Al mark recipe on STS 2 or STS 3 for 10 sec • Strip resist using piranha, spin-dry wafers • HMDS wafers, deposit thin resist on both sides, pre-bake, photo M1 (alignment marks) on bottom side making sure they line up with topside alignment marks, develop, post-bake • BOE for 4 min, spin-dry wafers • Alignment mark etch bottom side using Al mark recipe on STS 2 or STS 3 for 10 sec • HMDS wafers, deposit thin resist on both sides, pre-bake, photo M3 (6 um chamber etch) on bottom side, develop, post bake • BOE for 4 min, spin-dry wafers • Etch pump chamber from bottom using Jbetch in STS3 till 6 um chamber depth is obtained (measure using dektak profile meter) (Sbiaa, 2006), rotate wafers at least 4 times during etch • Strip resist using piranha, spin-dry wafers • Deposit 4 um of thick oxide on both sides using ICL DCVD • HMDS wafers, deposit thick resist on both sides, pre-bake, photo M5 (valve lip and posts) on bottom side, photo M3 (cross channels) on topside, develop, post-bake • Etch 4.3 um of oxide on both sides using ICL AME 5000 • Strip resist using piranha, spin-dry wafers • HMDS wafers, deposit thick resist on both sides, pre bake, photo M4 (through holes) on topside, develop, Post bake…”