MEMS-switched class-A-to-E reconfigurable power amplifier

Bell, Patrick; Popović, Zoya; Dyck, Christopher William

doi:10.1109/rws.2006.1615140

Cited by 4 publications

(5 citation statements)

References 9 publications

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“…A number of hybrid class-E amplifiers were reported at C-band, e.g. [14] and X-band [15][16][17][18][19][20] with GaAs FETs. MMIC class-E PAs are demonstrated in GaAs [13,15,20], InP [16], GaN [19] and CMOS/SiGe [21,24].…”

Section: Microwave Class-e Amplifiersmentioning

confidence: 99%

“…The insertion loss of the matching network in different states is below 0.3 dB, causing a few points degradation in PAE compared to a non-reconfigurable static PA made on the same alumina substrate and with the same GaAs MESFET die[18]. (a) Photo of reconfigurable class-A/E PA with two MEMS switches[18]. The plot shows measured insertion loss of the matching networks with a degradation due to reconfigurability of at most 0.2 dB at 10 GHz.…”

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confidence: 97%

“…GHz PA with an output matching network which enables the PA to operate in either linear class-A/AB or high-efficiency class-E using two Sandia MEMS ohmic switches. The insertion loss of the matching network in different states is below 0.3 dB, causing a few points degradation in PAE compared to a non-reconfigurable static PA made on the same alumina substrate and with the same GaAs MESFET die[18]. (a) Photo of reconfigurable class-A/E PA with two MEMS switches[18].…”

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confidence: 99%

See 2 more Smart Citations

Microwave Class-E Power Amplifiers: A Brief Review of Essential Concepts in High-Frequency Class-E PAs and Related Circuits

Popović

Garcia

2018

IEEE Microwave

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Scaling class-E operation to higher frequencies presents a number of challenges. The most obvious is the maximum frequency of class-E operation derived for the ideal class-E circuit as: , ≅ /(56.5). (1) where Imax is the maximum drain-to-source current of the switching device and Vds its drain-tosource biasing voltage. The transistor output capacitance COUT limits the frequency range of class-E operation, as does the drain-to-source voltage which implies lower output power. COUT can be de-embedded from a nonlinear model or measured large-signal parameters and used as a part of the output matching circuit. The class-E mode of operation is defined by the time-domain waveforms for a 50% duty cycle and assuming soft switching (both voltage and the derivative of

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Section: Microwave Class-e Amplifiersmentioning

confidence: 99%

mentioning

confidence: 97%

mentioning

confidence: 99%

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Microwave Class-E Power Amplifiers: A Brief Review of Essential Concepts in High-Frequency Class-E PAs and Related Circuits

Popović

Garcia

2018

IEEE Microwave

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“…[4] and X-band [5][6][7][8][9][10] with GaAs FETs. MMIC class-E PAs are demonstrated in GaAs [5,15], InP [6], GaN [9] and CMOS [11,16].…”

Section: Microwave Class-e Amplifiersmentioning

confidence: 99%

“…6 shows a reconfigurable 10-GHz PA with MEMS ohmic switch output matching network which enables the PA to operate in either linear class-A/AB or high-efficiency class-E. The insertion loss of the matching network in different states is below 0.3dB, causing a few points degradation in PAE compared to a non-reconfigurable static PA made on the same substrate and with the same GaAs die [8]. Fig.…”

Section: Microwave Class-e Amplifiersmentioning

confidence: 99%

Microwave class-E power amplifiers

Popović

Garcia

2017

2017 IEEE MTT-S International Microwave Symposium (IMS)

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Abstract-This paper reviews circuit architectures and demonstrated class-E power amplifiers in the UHF and microwave frequency range. Scaling class-E soft-switching operation to high frequencies presents a number of challenges, particularly in the control of parasitic reactances of the device and the circuit. Different approaches have been taken, from using parasitics of lumped elements to provide the correct fundamental and harmonic impedances in the UHF range, to transmission-line implementations at frequencies above 10GHz.

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