Mercury cadmium selenide for infrared detection

Doyle, Kevin; Swartz, C. H.; Dinan, J. H.; Myers, T. H.; Brill, G.; Chen, Yuanping; VanMil, Brenda L.; Wijewarnasuriya, P. S.

doi:10.1116/1.4798651

Cited by 12 publications

(3 citation statements)

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“…At 80 K, the electron mobility of the dominant carrier is measured to be 1.3 × 10 5 cm 2 •V −1 •s −1 and the background electron concentration to be 1.6 × 10 16 cm −3 . This electron mobility is significantly higher than that reported for the counterpart LWIR HgCdSe in previous work, which was in the range of 2.5 × 10 4 -3 × 10 4 cm 2 •V −1 •s −1 , [14] and is comparable to that (∼ 1.5 × 10 5 cm 2 •V −1 •s −1 ) of counterpart LWIR Hg 1−x Cd x Te (x = 0.22, ∼ 10.7 µm cut-off wavelength at 80 K) grown on lattice-matched CdZnTe substrates. [23,24] This indi-018103-7 cates the high crystal quality of the HgCdSe epitaxial layers grown, which agrees with the structural characterization of the HgCdSe epilayer discussed in the previous sections.…”

Section: Electrical Characterizationcontrasting

confidence: 62%

“…The HgCdSe composition was tuned by varying the Se/Cd BEP ratio, which is similar to that reported previously by other research groups. [13,14]…”

Section: Experimental Details 21 Materials Growthmentioning

confidence: 99%

“…The n-type behavior can be attributed to the existence of native Se vacancies and other impurities, as discussed in previous work. [14] To better understand the electrical properties of HgCdSe, temperature dependent MSA measurements were also undertaken on the HgCdSe sample with x = 0.18. Figure 11 presents the electron mobility and background electron concentration of HgCdSe with x = 0.18 measured at different temperatures.…”

Section: Electrical Characterizationmentioning

confidence: 99%

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A review on MBE-grown HgCdSe infrared materials on GaSb (211)B substrates

Zhang¹,

Pan²,

Liu³

et al. 2019

Chinese Phys. B

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We review our recent efforts on developing HgCdSe infrared materials on GaSb substrates via molecular beam epitaxy (MBE) for fabricating next generation infrared detectors with features of lower production cost and larger focal plane array format size. In order to achieve high-quality HgCdSe epilayers, ZnTe buffer layers are grown before growing HgCdSe, and the study of misfit strain in ZnTe buffer layers shows that the thickness of ZnTe buffer layer needs to be below 300 nm in order to minimize the generation of misfit dislocations. The cut-off wavelength/alloy composition of HgCdSe materials can be varied in a wide range by varying the ratio of Se/Cd beam equivalent pressure during the HgCdSe growth. Growth temperature presents significant impact on the material quality of HgCdSe, and lower growth temperature leads to higher material quality for HgCdSe. Typically, long-wave infrared HgCdSe (x = 0.18, cut-off wavelength of 10.4 µm at 80 K) presents an electron mobility as high as 1.3×10 5 cm 2 •V −1 •s −1 , a background electron concentration as low as 1.6×10 16 cm −3 , and a minority carrier lifetime as long as 2.2 µs. These values of electron mobility and minority carrier lifetime represent a significant improvement on previous studies of MBE-grown HgCdSe reported in the open literatures, and are comparable to those of counterpart HgCdTe materials grown on lattice-matched CdZnTe substrates. These results indicate that HgCdSe grown at the University of Western Australia, especially long-wave infrared can meet the basic material quality requirements for making high performance infrared detectors although further effort is required to control the background electron concentration to below 10 15 cm −3 . More importantly, even higher quality HgCdSe materials on GaSb are expected by further optimizing the growth conditions, using higher purity Se source material, and implementing postgrowth thermal annealing and defect/impurity gettering/filtering. Our results demonstrate the great potential of HgCdSe infrared materials grown on GaSb substrates for fabricating next generation infrared detectors with features of lower cost and larger array format size.

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Section: Electrical Characterizationcontrasting

confidence: 62%

“…The HgCdSe composition was tuned by varying the Se/Cd BEP ratio, which is similar to that reported previously by other research groups. [13,14]…”

Section: Experimental Details 21 Materials Growthmentioning

confidence: 99%

Section: Electrical Characterizationmentioning

confidence: 99%

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