Mercury cadmium telluride/tellurium intergrowths in HgCdTe epilayers grown by molecular-beam epitaxy

Aoki, Toshihiro; Smith, David J.; Chang, Yong; Zhao, Jun; Badano, G.; Grein, C. H.; Sivananthan, S.

doi:10.1063/1.1566462

Cited by 28 publications

(29 citation statements)

References 16 publications

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“…10,22,23 Within a surface crater defect, crystals of both HgCdTe and Te continue to nucleate, with the HgCdTe grains being either semicoherent or incoherent to the Te grains. 10 Energy-dispersive X-ray spectroscopy (EDS) data also confirmed the existence of excessive Te in the surface crater defects (Fig.…”

Section: Resultsmentioning

confidence: 98%

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Surface Morphology and Defect Formation Mechanisms for HgCdTe (211)B Grown by Molecular Beam Epitaxy

Chang

Becker

Grein

et al. 2008

Journal of Elec Materi

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The surface morphology and crystallinity of HgCdTe films grown by molecular beam epitaxy (MBE) on both CdZnTe and CdTe/Si (211)B substrates were characterized using atomic force microscopy (AFM), as well as scanning (SEM) and transmission (TEM) electron microscopy. Crosshatch patterns and sandybeach-like morphologies were commonly found on MBE (211) HgCdTe epilayers grown on both CdZnTe and CdTe/Si substrates. The patterns were oriented along the 213 Â Ã , 231 Â Ã , and 011 Â Ã directions, which were associated with the intersection between the (211) growth plane and each of the eight equivalent HgCdTe slip planes. This was caused by strain-driven operation of slip in these systems with relative large Schmid factor, and was accompanied by dislocation formation as well as surface strain relief. Surface crater defects were associated with relatively high growth temperature and/or low Hg flux, whereas microtwins were associated with relatively low growth temperature and/or high Hg flux. AFM and electron microscopy were used to reveal the formation mechanisms of these defects. HgCdTe/HgCdTe superlattices with layer composition differences of less than 2% were grown by MBE on CdZnTe substrates in order to clarify the formation mechanisms of void defects. The micrographs directly revealed the spiral nature of growth, hence demonstrating that the formation of void defects could be associated with the Burton, Cabrera, and Frank (BCF) growth mode. Void defects, including microvoids and craters, were caused by screw defect clusters, which could be triggered by Te precipitates, impurities, dust, other contamination or flakes. Needle defects originated from screw defect clusters linearly aligned along the 011 Â Ã directions with opposite Burgers vector directions. They were visible in HgCdTe epilayers grown on interfacial superlattices. Hillocks were generated owing to twin growth of void or needle defects on (111) planes due to low growth temperature and the corresponding insufficient Hg movement on the growth surface. Therefore, in addition to nucleation and growth of HgCdTe in the normal two-dimensional layer growth mode, the BCF growth mode played an important role and should be taken into account during investigation of HgCdTe MBE growth mechanisms.

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Section: Resultsmentioning

confidence: 98%

“…The TEM measurements have been discussed in detail elsewhere, 10,[22][23][24][25] including the additional steps required to reduce ion-milling damage and preparation artefacts. 25 …”

Section: Methodsmentioning

confidence: 99%

Surface Morphology and Defect Formation Mechanisms for HgCdTe (211)B Grown by Molecular Beam Epitaxy

Chang

Becker

Grein

et al. 2008

Journal of Elec Materi

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“…Mercury-rich MCT is widely used for the fabrication of infrared devices [5][6][7][8][9]. The cadmium-rich compound, on the other hand, has promising application in solar cells [10][11][12][13][14][15].…”

Section: Introductionmentioning

confidence: 99%

Structural, optical and electrical characterization of Hg_xCd_1‐xTe polycrystalline films fabricated by two‐source evaporation technique

Basharat

Hannan

Shah

et al. 2007

Cryst. Res. Technol.

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Two-source thermal evaporation technique was used to prepare Hg x Cd 1-x Te thin films onto scratch free transparent glass substrates. The structural investigations revealed that thin films were polycrystalline in nature. Transmittance measurements in the wavelength range (500-2700 nm) were used to calculate optical constants. The analysis of the optical absorption data showed that the optical band gap was of indirect type. In the composition range 0.05< x < 0.25 the films exhibited an optical band gap between 1.29 and 0.98 eV. In the same composition range the films were p-type and exhibited a resistivity, which varied between 10 2 and 10 -1 Ω-cm.

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“…The occurrence of HgCdTe surface crater defects was shown to be associated with the development of polycrystalline morphology, and high-resolution observations revealed finely spaced HgCdTe/Te intergrowths that had nucleated within the HgCdTe epilayers. 23 SLs of HgTe/Hg 0.05 Cd 0.95 Te grown on CdZnTe(211) substrates have also been studied, and high-resolution studies using annular dark-field (or Z-contrast) imaging revealed interdiffusion and changes in well/barrier widths as a result of low-temperature annealing. 24 …”

Section: Cdznte(211)b Substratementioning

confidence: 99%

Atomic-Scale Characterization of II–VI Compound Semiconductors

Smith

2013

Journal of Elec Materi

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Alloys of II-VI compound semiconductors with suitable band gap selection potentially provide broad coverage of wavelengths for photodetector applications. Achievement of high-quality epitaxial growth is, however, essential for successful development of integrated photonic and optoelectronic devices. Atomic-scale characterization of structural defects in II-VI heterostructures using electron microscopy plays an invaluable role in accomplishing this goal. This paper reviews some recent high-resolution studies of II-VI compound semiconductors with zincblende crystal structure, as grown epitaxially on commonly used substrates. Exploratory studies using aberration-corrected electron microscopes are also briefly considered.

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Mercury cadmium telluride/tellurium intergrowths in HgCdTe epilayers grown by molecular-beam epitaxy

Cited by 28 publications

References 16 publications

Surface Morphology and Defect Formation Mechanisms for HgCdTe (211)B Grown by Molecular Beam Epitaxy

Surface Morphology and Defect Formation Mechanisms for HgCdTe (211)B Grown by Molecular Beam Epitaxy

Structural, optical and electrical characterization of Hg_xCd_1‐xTe polycrystalline films fabricated by two‐source evaporation technique

Atomic-Scale Characterization of II–VI Compound Semiconductors

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Mercury cadmium telluride/tellurium intergrowths in HgCdTe epilayers grown by molecular-beam epitaxy

Cited by 28 publications

References 16 publications

Surface Morphology and Defect Formation Mechanisms for HgCdTe (211)B Grown by Molecular Beam Epitaxy

Surface Morphology and Defect Formation Mechanisms for HgCdTe (211)B Grown by Molecular Beam Epitaxy

Structural, optical and electrical characterization of HgxCd1‐xTe polycrystalline films fabricated by two‐source evaporation technique

Atomic-Scale Characterization of II–VI Compound Semiconductors

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Product

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Structural, optical and electrical characterization of Hg_xCd_1‐xTe polycrystalline films fabricated by two‐source evaporation technique