Metal contact induced crystallization in films of amorphous silicon and germanium

Herd, S. R.; Chaudhari, P.; Brodsky, M. H.

doi:10.1016/0022-3093(72)90267-0

Cited by 293 publications

(63 citation statements)

References 2 publications

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“…Si and the considered metal. Herd et al [15] concluded from their work that the crystallization is controlled by the kinetics of the diffusion along the metal/semiconductor interface. These kinetics are enhanced due to the decrease of the eutectic temperature, caused by the amorphous semiconductor [16].…”

Section: Discussionmentioning

confidence: 99%

Influence of the interface on the crystallization of amorphous Ge in Pb/Ge multilayers

et al. 1988

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The amorphous to crystalline phase transition of Ge in contact with Pb has been extensively investigated in Pb/Ge multilayers. We find that the Ge crystallizes at reduced temperatures in the range of 100 -200 °C depending on the thickness of the Ge and the Pb. Simultaneously the texture of tfie Pb improves and the layered structure completely disappears. The basis for the reduction of the crystallization temperature is the enhanced diffusion kinetics at the interface, caused by the adjacent Pb layer.

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Section: Discussionmentioning

confidence: 99%

Influence of the interface on the crystallization of amorphous Ge in Pb/Ge multilayers

et al. 1988

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“…The low temperature crystallization of amorphous silicon or germanium by metals is a well known phenomenon [10], whose exact physical background is still not sufficiently understood. Because the solid phase crystallization temperature in the presence of many metals (Au, Ag, Ni, Al, …) can be considerably reduced (e.g.…”

Section: Aluminium-induced Crystallization Of Sige Filmsmentioning

confidence: 99%

Thin polycrystalline SiGe films by aluminium‐induced layer exchange

Lechner

Buschbeck

Gjukic

et al. 2004

phys. stat. sol. (c)

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Recent results concerning the aluminium-induced crystallization of thin SiGe alloy films are reviewed. This crystallization process can be employed throughout the entire alloy range and results in polycrystalline material without a significant amount of phase separation. The structural, optical, and electronic properties of the polycrystalline SiGe films have been determined by a variety of techniques and for different Ge contents. The use of such films in thin film solar cells is discussed.

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“…This primarily concerns not only the grain size but also the quality of the grain. Two common techniques to fabricate poly-Si is solid phase crystallization (SPC) from amorphous silicon (a-Si:H) at temperature of about 600 8C or metal induced crystallization (MIC) [1][2][3][4]. However, SPC suffers from long processing times and a large dislocation density in the grains.…”

Section: Introductionmentioning

confidence: 99%

The influence of Fermi energy on structural and electrical properties of laser crystallized P-doped amorphous silicon

Saleh

Nickel

2008

Applied Surface Science

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Metal contact induced crystallization in films of amorphous silicon and germanium

Cited by 293 publications

References 2 publications

Influence of the interface on the crystallization of amorphous Ge in Pb/Ge multilayers

Influence of the interface on the crystallization of amorphous Ge in Pb/Ge multilayers

Thin polycrystalline SiGe films by aluminium‐induced layer exchange

The influence of Fermi energy on structural and electrical properties of laser crystallized P-doped amorphous silicon

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