The influence of Fermi energy on structural and electrical properties of laser crystallized P-doped amorphous silicon

Saleh, Rosari; Nickel, N. H.

doi:10.1016/j.apsusc.2007.11.011

Cited by 3 publications

(2 citation statements)

References 21 publications

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“…The p-type layer of a-SiC: H is applied to the solar cell on top lapiasan, the p-type layer in solar cells based on a-SiC: H p-i-n. As a light-receiving layer, p-type layer should be transparent so that the incoming photons more much, which means the carrier concentration increases [1][2][3]. In order for the p-type layer to be transparent and able to increase the concentration of the charge carrier, carbon is added when depositing the p-type layer which is made thinner.…”

Section: Introductionmentioning

confidence: 99%

The Effect of Increased Methane Flow Rate on Electronic Correlation of Amorphous Silicon Carbon (a-SiC: H)

Prayogi

Sholehah

Cahyono

et al. 2021

Preprint

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In this study, we report for the first time that the addition of methane (CH4) flow rate in the p-type a-SiC: H layer greatly affects the electronic correlation in increasing the conversion efficiency of solar cells. The a-SiC: H p-type layer was grown using Plasma Enhanced Chemical Vapor Deposition (PECVD) on Indium Tin Oxide (ITO) substrate with various methane flow rates. The a-SiC: H p-type layer was characterized including the complex dielectric properties and the complex refractive index using Ellipsometric Spectroscopy (ES), while the surface roughness morphology was used Atomic Force Microscopy (AFM). In sample P-2 there is a change in the form of a decrease in the value of the refractive index < n > and the E0 energy in the lower energy compared to the P-1 sample with a change of 0.3 eV, an increase in the optical gap and a decrease in the value of the real and imaginary dielectric function. While the influence of an increase in the carbon composition of the amorphous network order shows the addition of amorphous tissue disorder. Our results, show that the optical magnitude of the p-type a-SiC: H layer is not only affected by the amount of carbon in the film but also the hydrogen which is thought to contribute.

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Section: Introductionmentioning

confidence: 99%

The Effect of Increased Methane Flow Rate on Electronic Correlation of Amorphous Silicon Carbon (a-SiC: H)

Prayogi

Sholehah

Cahyono

et al. 2021

Preprint

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“…In this paper we use amorphous Si instead of phosphor nitride as a dopant source, since it does nominally not contain any atoms other than P, Si, and H. The latter may support the ablation process since the film decomposes in H gas and Si 6 and might help to passivate defects if some H is transferred into the wafer. Carbon or nitrogen‐related defects are avoided.…”

Section: Introductionmentioning

confidence: 99%

Laser transfer doping for contacting n‐type crystalline Si solar cells

Ferré

Gogolin

Müller

et al. 2011

Physica Status Solidi (a)

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We demonstrate laser transfer doping (LTD) for producing locally doped regions in surface passivated Silicon wafers. A pulsed laser transfers phosphorus‐doped amorphous silicon from a carrier glass to a surface passivated silicon wafer. We employ this process for producing local high‐low junctions for the formation of n+–n back surface field layers that are contacted with Al. The contact's surface recombination velocities and the contact resistances depend on the laser processing and annealing conditions. They range from Scont = 20 to 1500 cm s−1 and from Rcont = 1 to 1000 mΩ cm2, respectively. The combination of acceptable contact resistance and low recombination velocities makes the LTD technique suitable for the formation of the rear contacts of n‐type high‐efficiency solar cells. The simplicity of the process makes it a candidate for industrial production.

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Non-linear temperature dependent Raman parametric changes: An identification of Fano intervened systems

Rani,

Tanwar,

Ghosh

et al. 2023

Physics Reports

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The influence of Fermi energy on structural and electrical properties of laser crystallized P-doped amorphous silicon

Cited by 3 publications

References 21 publications

The Effect of Increased Methane Flow Rate on Electronic Correlation of Amorphous Silicon Carbon (a-SiC: H)

The Effect of Increased Methane Flow Rate on Electronic Correlation of Amorphous Silicon Carbon (a-SiC: H)

Laser transfer doping for contacting n‐type crystalline Si solar cells

Non-linear temperature dependent Raman parametric changes: An identification of Fano intervened systems

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