Heterostructures increasingly attracted attention over
the past
several years to enable various optoelectronic and photonic applications.
In this work, atomically thin interfaces of Ir/Al2O3 heterostructures compatible with micro-optoelectronic technologies
are reported. Their structural and optical properties were determined
by spectroscopic and microscopic techniques (XRR, XPS, HRTEM, spectroscopic
ellipsometry, and UV/vis/NIR spectrophotometry). The XRR and HRTEM
analyses reveal a layer-by-layer growth mechanism of Ir in atomic
scale heterostructures, which is different from the typical island-type
growth of metals on dielectrics. Alongside, XPS investigations imply
the formation of Ir–O–Al bonding at the interfaces for
lower Ir concentrations, in contrast to the nanoparticle core–shell
structure formation. Precisely tuning the ratio of the constituents
ensures the control of the dispersion profile along with a transition
from effective dielectric to metallic heterostructures. The Ir coating
thickness was varied ranging from a few angstroms to films of about
7 nm in the heterostructures. The transition has been observed in
the structures containing individual Ir coating thicknesses of about
2–4 nm. Following this, we show epsilon-near-zero metamaterials
with tunable dielectric constants by precisely varying the composition
of such heterostructures. Overall, a comprehensive study on structural
and optical properties of the metal–dielectric interfaces of
Ir/Al2O3 heterostructures was addressed, indicating
an extension of the material portfolio available for novel optical
functionalities.