Metal doping in topological insulators- a key for tunable generation of terahertz

Sharma, Prince; Sharma, M. M.; Kumar, Mahesh; Awana, V. P. S.

doi:10.1016/j.ssc.2020.114005

Cited by 11 publications

(2 citation statements)

References 44 publications

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“…In Figure 2, the tunable nature of the single-crystalline flake of bismuth selenide [34] is shown in detail. It is discovered that the frequency of phonon vibrations may be controlled by tuning the carriers in the crystal by appropriate doping, as well [45,54]. Consequently, the adjustable nature of terahertz in single crystals might be beneficial in the growth of optoelectronics and Terahertz applications.…”

Section: Terahertz Generation At Room Temperaturementioning

confidence: 99%

Temperature-Dependent Evaluation of Charge Carriers and Terahertz Generation in Bismuth and Antimony-Based Chalcogenides

Sharma¹,

Awana²,

Kumar³

2022

Chalcogenides - Preparation and Applications

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Bismuth and antimony-based chalcogenides have been extensively publicized in recent years owing to their intrinsic characteristics and inherent topological character. Such a system contains Bi2Se3, Bi2Te3, Sb2Te3, etc. The single crystalline facets of these samples were discovered to have a generation of ~2 THz while having a giant magneto-resistance of around ~300%. These inherent and dynamical features of the system make it resilient for several applications in optoelectronics and spintronics. The temperature-dependent assessment of conductivity, terahertz generation, and charge carrier dynamics aids in understanding the fundamental phenomena in the carrier mechanism of the chalcogenides. This chapter contains the essential fundamental knowledge of the single crystal chalcogenides via charge carrier & phonon dynamics and their response in the terahertz frequency domain.

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Section: Terahertz Generation At Room Temperaturementioning

confidence: 99%

Temperature-Dependent Evaluation of Charge Carriers and Terahertz Generation in Bismuth and Antimony-Based Chalcogenides

Sharma¹,

Awana²,

Kumar³

2022

Chalcogenides - Preparation and Applications

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“…For instance, in 2007, Fu and Kane proposed a criteria for the identification of TI material based on the parity of its electronic band structure [24]. Despite of natural materials, some TIs have been made by deliberate doping [25][26][27][28]. There are many compounds waiting for experimental verification of being TIs.…”

Section: Introductionmentioning

confidence: 99%

Theoretical investigation of structural, topological, mechanical and thermal behavior of SrPtS and BaPtS Heusler alloys

Shakil¹,

Rehman²,

Khan³

et al. 2022

Phys. Scr.

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Topological Insulators (TIs) have become new potential materials because of their super surface conduction and bulk insulation. Their technological importance motivated us to explore the topological nature of SrPtS and BaPtS Heusler alloys using full potential linearized augmented plane wave (FP-LAPW) method as implemented in Wien2k. Structural stability is checked using three different Wyckoff positions and further investigations were carried out to find the dynamic stability with phonon dispersion curves. The electronic band structure of both materials show metallic nature when generalized gradient approximation with Perdew-Burke-Ernzerhof (GGA+PBE) exchange and correlation functional is used but there appears a band gap when spin orbit coupling (SOC) was implemented. The band inversion strength has also been tested by applying the external pressure. Further, both alloys have been found mechanically stable and ductile in nature by determining the elastic parameters. Thermal and electrical conductances were also determined and discussed. The findings show that these materials being topological insulators are suitable for technological applications.

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Topological insulator Bi2Se3 as a tunable crystal for terahertz frequency generation

2021

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Metal doping in topological insulators- a key for tunable generation of terahertz

Cited by 11 publications

References 44 publications

Temperature-Dependent Evaluation of Charge Carriers and Terahertz Generation in Bismuth and Antimony-Based Chalcogenides

Temperature-Dependent Evaluation of Charge Carriers and Terahertz Generation in Bismuth and Antimony-Based Chalcogenides

Theoretical investigation of structural, topological, mechanical and thermal behavior of SrPtS and BaPtS Heusler alloys

Topological insulator Bi2Se3 as a tunable crystal for terahertz frequency generation

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