Scaling down of semiconductor devices requires high-
k
dielectric materials to continue lowering the operating voltage of field-effect transistors (FETs) and storing sufficient charge on a smaller area. Here, we investigate the dielectric properties of epitaxial BaHf
0.6
Ti
0.4
O
3
(BHTO), an alloy of perovskite oxide barium hafnate (BaHfO
3
) and barium titanate (BaTiO
3
). We found the dielectric constant, the breakdown field, and the leakage current to be 150, 5.0 megavolts per centimeter (MV cm
−1
), and 10
−4
amperes per square centimeter at 2 MV cm
−1
, respectively. The results suggest that two-dimensional (2D) carrier density of more than
n
2D
= 10
14
per square centimeter (cm
−2
) could be modulated by the BHTO gate oxide. We demonstrate an n-type accumulation mode FET and direct suppression of more than
n
2D
= 10
14
cm
−2
via an n-type depletion-mode FET. We attribute the large dielectric constant, high breakdown field, and low leakage current of BHTO to the nanometer scale stoichiometric modulation of hafnium and titanium.