Metal Hole Arrays as Resonant Photo-Coupler for Charge Sensitive Infrared Phototransistors

Nickels, Patrick; Matsuda, Shinpei; Ueda, Taisei; An, Zhenghua; Komiyama, S.

doi:10.1109/jqe.2009.2035822

Cited by 37 publications

(29 citation statements)

References 28 publications

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“…At first glance, F is close to the condition when both mechanisms, namely SPP (n eff λ SPP ≈P) and LSR (n eff λ LSR ≈2L), coincide: λ SPP ≈λ LSR (and therefore P≈2L) with the same effective diffractive indexes. This appears to be consistent with previous reports [23,24] and experimental data [18]. However, noting that the effective indexes for SPP and LSR are practically different (see Eqs.…”

Section: Resultssupporting

confidence: 93%

“…5a, the field enhancement is maximum at the common resonance frequency of 20 THz and it is caused by the strong local field enhancement effects associated with resonance. Since the quantum well is only sensitive to the electric field in the growth direction [18], the spectra of ‹E z 2 ›/‹E 0 2 › represent the ability of the device to absorb light waves. As shown by the spectra of ‹E z 2 ›/‹E 0 2 › in Fig.…”

Section: Resultsmentioning

confidence: 99%

“…The quantum well is responsible for the photo absorption (and in turn, photo-detection) through the inter-subband transitions of electrons. The plasmonic coupler couples far-field light converting it to transverse-magnetic (TM) electromagnetic wave required by the quantum well absorption [16,18]. In other words, the coupler maximizes the vertical electric field amplitude (|E z |) at the quantum well location under far-field front illumination [18].…”

Section: Structure and Simulation Methodsmentioning

confidence: 99%

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Optimization of Optoelectronic Plasmonic Structures

Wang

et al. 2011

Plasmonics

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We discuss the interplay between surface plasmon polaritons (SPPs) and localized shape resonances (LSRs) in a plasmonic structure working as a photocoupler for a GaAs quantum well photodetector. For a targeted electronic inter-subband transition inside the quantum well, maximum photon absorption is found by compromising two effects: the mode overlapping with incident light and the lifetime of the resonant photons. Under the optimal conditions, the LSR mediates the coupling between the incident light and plasmonic structure while the SPP provides long-lived resonance which is limited ultimately by metal loss. The present work provides insight to the design of plasmonic photo-couplers in semiconductor optoelectronic applications.

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Section: Resultssupporting

confidence: 93%

Section: Resultsmentioning

confidence: 99%

Section: Structure and Simulation Methodsmentioning

confidence: 99%

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Optimization of Optoelectronic Plasmonic Structures

Wang

et al. 2011

Plasmonics

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“…14 (a)) (Nickels et al, 2010). The SPP resonance induces wavelength-selective strong electric confined near the surface of the metal sheets intensifying the subband transition in the QW 100 nm below the surface.…”

Section: Improvement Of Quantum Efficiencymentioning

confidence: 99%

“…Other coupler geometries such as 2-D metal hole arrays with square-shaped holes, 2-D metal patch arrays (capacitive metal mesh), and patch antennas (microstrip antennas) have yielded lower values of ≈ 1%-3% (Ueda et al, 2008;Nickels et al, 2010). The device used for Fig.…”

Section: Improvement Of Quantum Efficiencymentioning

confidence: 99%

Far-Infrared Single-Photon Detectors Fabricated in Double-Quantum-Well Structures

Ueda¹,

Komiyama²

2012

Photodetectors

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Temperature Dependence of Novel Single-Photon Detectors in the Long-Wavelength Infrared Range

Ueda

Komiyama

2010

J Infrared Milli Terahz Waves

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Novel single-photon detectors, called Charge-sensitive Infrared Phototransistor (CSIP), have been developed in the long wavelength infrared (LWIR) range. The devices are fabricated in GaAs/AlGaAs double-quantum-well (DQW) structure, and do not require ultralow temperatures (T<1 K) for operation. Figures of merit are determined in a T-range of 4.2 K∼30 K by using a homemade all-cryogenic spectrometer. We found that the photosignal persists up to around 30 K. Excellent specific detectivity D * =9.6×10 14 cm Hz 1/2 /W and noise equivalent power NEP=8.3×10 −19 W/Hz 1/2 are derived up to T=23 K. The dynamic range of detection exceeds 10 6 , roughly ranging from attowatt to picowatt levels. These values are by a few orders of magnitude higher than that of the state-of-the-art values of other detectors. Simple planar structure of CSIPs is feasible for array fabrication and will make it possible to monolithically integrate with reading circuit. CSIPs are, therefore, not only extremely sensitive but also suitable for practical use in wide ranging applications.

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Metal Hole Arrays as Resonant Photo-Coupler for Charge Sensitive Infrared Phototransistors

Cited by 37 publications

References 28 publications

Optimization of Optoelectronic Plasmonic Structures

Optimization of Optoelectronic Plasmonic Structures

Far-Infrared Single-Photon Detectors Fabricated in Double-Quantum-Well Structures

Temperature Dependence of Novel Single-Photon Detectors in the Long-Wavelength Infrared Range

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