2004
DOI: 10.1016/j.tsf.2004.08.150
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Metal-induced crystallization of amorphous Si1−Ge by rapid thermal annealing

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Cited by 10 publications
(1 citation statement)
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“…A third and very well-documented method of enhancing grain sizes at low temperatures is that of metal-induced crystallization (MIC) and metal-induced lateral crystallization (MILC) [54][55][56][57][58][59][60][61][62][63][64]. In both MIC and MILC, a metal (typically nickel) is brought into contact with Ge or Si and annealed at a low temperature (typically up to 5500 C for Ge).…”
Section: Low-t Grain Engineeringmentioning
confidence: 99%
“…A third and very well-documented method of enhancing grain sizes at low temperatures is that of metal-induced crystallization (MIC) and metal-induced lateral crystallization (MILC) [54][55][56][57][58][59][60][61][62][63][64]. In both MIC and MILC, a metal (typically nickel) is brought into contact with Ge or Si and annealed at a low temperature (typically up to 5500 C for Ge).…”
Section: Low-t Grain Engineeringmentioning
confidence: 99%