Metal-Induced Trap States: The Roles of Interface and Border Traps in HfO2/InGaAs

Abstract

By combining capacitance–voltage measurements, TCAD simulations, and X-ray photoelectron spectroscopy, the impact of the work function of the gate metals Ti, Mo, Pd, and Ni on the defects in bulk HfO2 and at the HfO2/InGaAs interfaces are studied. The oxidation at Ti/HfO2 is found to create the highest density of interface and border traps, while a stable interface at the Mo/HfO2 interface leads to the smallest density of traps in our sample. The extracted values of Dit of 1.27 × 1011 eV−1cm−2 for acceptor-like traps and 3.81 × 1011 eV−1cm−2 for donor-like traps are the lowest reported to date. The density and lifetimes of border traps in HfO2 are examined using the Heiman function and strongly affect the hysteresis of capacitance–voltage curves. The results help systematically guide the choice of gate metal for InGaAs.

Art etching of graphene

“…In this instance, the carbon source's dissociated H radicals will diffuse onto the substrate. 72 Then in O 2 aided art etching, oxygen will help to control the nucleation density of graphene. When oxygen comes into contact with the substrate, it adsorbs and diffuses onto its surface.…”

Impact of Europium and Niobium Doping on Hafnium Oxide (HfO2): Comparative Analysis of Sol–Gel and Combustion Synthesis Methods

“…Peak fitting of the Hf4f spectra was carried out using the Shirley background subtraction and Gaussian/Lorentzian functions. The results are represented by two pairs of Gaussian lines (doublet) corresponding to 4f5/2 and 4f7/2 sublevels of the 4f level due to spin-orbit splitting one to stoichiometric HfO 2 and the other one to oxygen-deficient HfO 2−x (Figure 7, doublet denoted by 1-HfO 2 and 2-HfO 2−x ) [36][37][38][39][40]. The literature states that it is not uncommon for hafnium suboxide to be formed in addition to the hafnium dioxide [22,41,42].…”